Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon

J. K. Tu; J. J. Talghader; J. S. Smith; M. A. Hadley

doi:10.1049/el:19950989

Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon

J. K. Tu
, J. J. Talghader
, J. S. Smith
, M. A. Hadley

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

Vertical cavity surface emitting lasers (VCSELs) have been successfully integrated by fluidic self-assembly (FSA) into 10 μm deep holes etched into an Si substrate. These 40 × 40 × 10 μm₃ devices were fully planarised and metallised after integration. The VCSELs operated pulsed at 0.98 μm with a threshold current as low as 75mA and a turn-on voltage of 2.9V.

Original language	English (US)
Pages (from-to)	1448-1449
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	17
DOIs	https://doi.org/10.1049/el:19950989
State	Published - Aug 17 1995

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Packaging
Vertical cavity surface emitting lasers

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10.1049/el:19950989

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title = "Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon",

abstract = "Vertical cavity surface emitting lasers (VCSELs) have been successfully integrated by fluidic self-assembly (FSA) into 10 μm deep holes etched into an Si substrate. These 40 × 40 × 10 μm3 devices were fully planarised and metallised after integration. The VCSELs operated pulsed at 0.98 μm with a threshold current as low as 75mA and a turn-on voltage of 2.9V.",

keywords = "Packaging, Vertical cavity surface emitting lasers",

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year = "1995",

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language = "English (US)",

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T1 - Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon

AU - Tu, J. K.

AU - Talghader, J. J.

AU - Smith, J. S.

AU - Hadley, M. A.

PY - 1995/8/17

Y1 - 1995/8/17

N2 - Vertical cavity surface emitting lasers (VCSELs) have been successfully integrated by fluidic self-assembly (FSA) into 10 μm deep holes etched into an Si substrate. These 40 × 40 × 10 μm3 devices were fully planarised and metallised after integration. The VCSELs operated pulsed at 0.98 μm with a threshold current as low as 75mA and a turn-on voltage of 2.9V.

AB - Vertical cavity surface emitting lasers (VCSELs) have been successfully integrated by fluidic self-assembly (FSA) into 10 μm deep holes etched into an Si substrate. These 40 × 40 × 10 μm3 devices were fully planarised and metallised after integration. The VCSELs operated pulsed at 0.98 μm with a threshold current as low as 75mA and a turn-on voltage of 2.9V.

KW - Packaging

KW - Vertical cavity surface emitting lasers

UR - https://www.scopus.com/pages/publications/0029354571

UR - https://www.scopus.com/pages/publications/0029354571#tab=citedBy

U2 - 10.1049/el:19950989

DO - 10.1049/el:19950989

M3 - Article

AN - SCOPUS:0029354571

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JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon

Abstract

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