Flexible multi-level resistive memory with high current ratio by electrical triggering into insulating layer

Sin Hyung Lee, In Ho Lee, Chang Min Keum, Min Hoi Kim, Chiwoo Kim, Sin Doo Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrate a flexible multi-level resistive memory device, based on the concept of electrical triggering into an insulating layer, which exhibits a high current ratio between two memory states in the unipolar mode of operation. Due to the presence of a triggering zone in unit memory cell, three resistive memory states having different domain sizes of the conductive filaments are achieved. Each memory state is readable without the disturbances by other states and the current ratio is as high as 103. The multi-level memory states are found to be well preserved during bending and applicable for constructing flexible and high-density data storage systems.

Original languageEnglish (US)
Pages (from-to)357-361
Number of pages5
JournalOrganic Electronics
Volume51
DOIs
StatePublished - Dec 1 2017

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high current
Data storage equipment
data storage
filaments
disturbances
cells

Keywords

  • Electrical triggering
  • High current ratio
  • Multi-level memory
  • Resistive memory
  • Unipolar mode

Cite this

Flexible multi-level resistive memory with high current ratio by electrical triggering into insulating layer. / Lee, Sin Hyung; Lee, In Ho; Keum, Chang Min; Kim, Min Hoi; Kim, Chiwoo; Lee, Sin Doo.

In: Organic Electronics, Vol. 51, 01.12.2017, p. 357-361.

Research output: Contribution to journalArticle

Lee, Sin Hyung ; Lee, In Ho ; Keum, Chang Min ; Kim, Min Hoi ; Kim, Chiwoo ; Lee, Sin Doo. / Flexible multi-level resistive memory with high current ratio by electrical triggering into insulating layer. In: Organic Electronics. 2017 ; Vol. 51. pp. 357-361.
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AU - Lee, Sin Doo

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