Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model

J. S T Huang; J. W. Schrankler

doi:10.1109/T-ED.1985.22062

Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model

J. S T Huang, J. W. Schrankler

Technology Commercialization

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET's before and after total dose radiation are in good agreement with the proposed model.

Original language	English (US)
Pages (from-to)	1001-1002
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	32
Issue number	5
DOIs	https://doi.org/10.1109/T-ED.1985.22062
State	Published - May 1985

Publisher link

10.1109/T-ED.1985.22062

Find It

Find It at U of M Libraries

Cite this

@article{3b6a7eb1fdeb4267bed0170c2cdbe341,

title = "Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model",

abstract = "This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET's before and after total dose radiation are in good agreement with the proposed model.",

author = "Huang, {J. S T} and Schrankler, {J. W.}",

year = "1985",

month = may,

doi = "10.1109/T-ED.1985.22062",

language = "English (US)",

volume = "32",

pages = "1001--1002",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model

AU - Huang, J. S T

AU - Schrankler, J. W.

PY - 1985/5

Y1 - 1985/5

N2 - This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET's before and after total dose radiation are in good agreement with the proposed model.

AB - This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET's before and after total dose radiation are in good agreement with the proposed model.

UR - http://www.scopus.com/inward/record.url?scp=0022059443&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022059443&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1985.22062

DO - 10.1109/T-ED.1985.22062

M3 - Article

AN - SCOPUS:0022059443

SN - 0018-9383

VL - 32

SP - 1001

EP - 1002

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this