Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model

J. S T Huang, J. W. Schrankler

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET's before and after total dose radiation are in good agreement with the proposed model.

Original languageEnglish (US)
Pages (from-to)1001-1002
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume32
Issue number5
DOIs
StatePublished - May 1985

Fingerprint Dive into the research topics of 'Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model'. Together they form a unique fingerprint.

  • Cite this