Finite-point-based transistor model: A new approach to fast circuit simulation

Min Chen, Wei Zhao, Frank Liu, Yu Cao

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this paper, a new approach of transistor modeling is developed for fast statistical circuit simulation in the presence of variations. For both the I-V and C-V characteristics of a transistor, finite data points are identified based on their physical meanings and their importance in circuit operation. The impact of process and design variations is embedded into these key points using analytical expressions. During the simulation, the entire I-V and C-V curves are interpolated from these points with simple polynomial formulas. This novel approach significantly enhances the simulation speed with sufficient accuracy. The model is implemented in Verilog-A to support generic circuit simulators. The accuracy and convergence of the proposed model are comprehensively evaluated through a set of benchmark circuits, including nand, a pass-gate, latches, AOI, ring oscillators, and an adder. Compared to SPICE simulations with the BSIM models, the simulation time can be reduced by 7 × in transient analysis and more than 9 × in Monte-Carlo simulations.

Original languageEnglish (US)
Article number4801560
Pages (from-to)1470-1480
Number of pages11
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Issue number10
StatePublished - Oct 2009
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received December 18, 2007; revised June 02, 2008. First published March 16, 2009; current version published September 23, 2009. This work was supported in part by IBM, in part by Intel, and in part by the National Science Foundation (NSF) under Grant CCF-0546054. M. Chen, W. Zhao, and Y. Cao are with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: [email protected]). F. Liu is with the IBM Research Laboratory, Austin, TX 78758 USA. Digital Object Identifier 10.1109/TVLSI.2008.2005061


  • Circuit simulation
  • Finite-point-based model
  • Process variation
  • Speed
  • Statistical analysis
  • Transistor model


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