Finite-point-based transistor model: A new approach to fast circuit simulation

Min Chen; Wei Zhao; Frank Liu; Yu Cao

doi:10.1109/TVLSI.2008.2005061

Finite-point-based transistor model: A new approach to fast circuit simulation

Min Chen, Wei Zhao, Frank Liu, Yu Cao

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this paper, a new approach of transistor modeling is developed for fast statistical circuit simulation in the presence of variations. For both the I-V and C-V characteristics of a transistor, finite data points are identified based on their physical meanings and their importance in circuit operation. The impact of process and design variations is embedded into these key points using analytical expressions. During the simulation, the entire I-V and C-V curves are interpolated from these points with simple polynomial formulas. This novel approach significantly enhances the simulation speed with sufficient accuracy. The model is implemented in Verilog-A to support generic circuit simulators. The accuracy and convergence of the proposed model are comprehensively evaluated through a set of benchmark circuits, including nand, a pass-gate, latches, AOI, ring oscillators, and an adder. Compared to SPICE simulations with the BSIM models, the simulation time can be reduced by 7 × in transient analysis and more than 9 × in Monte-Carlo simulations.

Original language	English (US)
Article number	4801560
Pages (from-to)	1470-1480
Number of pages	11
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	17
Issue number	10
DOIs	https://doi.org/10.1109/TVLSI.2008.2005061
State	Published - Oct 2009
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received December 18, 2007; revised June 02, 2008. First published March 16, 2009; current version published September 23, 2009. This work was supported in part by IBM, in part by Intel, and in part by the National Science Foundation (NSF) under Grant CCF-0546054. M. Chen, W. Zhao, and Y. Cao are with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: [email protected]). F. Liu is with the IBM Research Laboratory, Austin, TX 78758 USA. Digital Object Identifier 10.1109/TVLSI.2008.2005061

Keywords

Circuit simulation
Finite-point-based model
Process variation
Speed
Statistical analysis
Transistor model

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10.1109/TVLSI.2008.2005061

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@article{83bd0bfd2a3946a582e7064cfab80bd8,

title = "Finite-point-based transistor model: A new approach to fast circuit simulation",

abstract = "In this paper, a new approach of transistor modeling is developed for fast statistical circuit simulation in the presence of variations. For both the I-V and C-V characteristics of a transistor, finite data points are identified based on their physical meanings and their importance in circuit operation. The impact of process and design variations is embedded into these key points using analytical expressions. During the simulation, the entire I-V and C-V curves are interpolated from these points with simple polynomial formulas. This novel approach significantly enhances the simulation speed with sufficient accuracy. The model is implemented in Verilog-A to support generic circuit simulators. The accuracy and convergence of the proposed model are comprehensively evaluated through a set of benchmark circuits, including nand, a pass-gate, latches, AOI, ring oscillators, and an adder. Compared to SPICE simulations with the BSIM models, the simulation time can be reduced by 7 × in transient analysis and more than 9 × in Monte-Carlo simulations.",

keywords = "Circuit simulation, Finite-point-based model, Process variation, Speed, Statistical analysis, Transistor model",

author = "Min Chen and Wei Zhao and Frank Liu and Yu Cao",

note = "Funding Information: Manuscript received December 18, 2007; revised June 02, 2008. First published March 16, 2009; current version published September 23, 2009. This work was supported in part by IBM, in part by Intel, and in part by the National Science Foundation (NSF) under Grant CCF-0546054. M. Chen, W. Zhao, and Y. Cao are with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: [email protected]). F. Liu is with the IBM Research Laboratory, Austin, TX 78758 USA. Digital Object Identifier 10.1109/TVLSI.2008.2005061",

year = "2009",

month = oct,

doi = "10.1109/TVLSI.2008.2005061",

language = "English (US)",

volume = "17",

pages = "1470--1480",

journal = "IEEE Transactions on Very Large Scale Integration (VLSI) Systems",

issn = "1063-8210",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Finite-point-based transistor model

T2 - A new approach to fast circuit simulation

AU - Chen, Min

AU - Zhao, Wei

AU - Liu, Frank

AU - Cao, Yu

N1 - Funding Information: Manuscript received December 18, 2007; revised June 02, 2008. First published March 16, 2009; current version published September 23, 2009. This work was supported in part by IBM, in part by Intel, and in part by the National Science Foundation (NSF) under Grant CCF-0546054. M. Chen, W. Zhao, and Y. Cao are with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: [email protected]). F. Liu is with the IBM Research Laboratory, Austin, TX 78758 USA. Digital Object Identifier 10.1109/TVLSI.2008.2005061

PY - 2009/10

Y1 - 2009/10

N2 - In this paper, a new approach of transistor modeling is developed for fast statistical circuit simulation in the presence of variations. For both the I-V and C-V characteristics of a transistor, finite data points are identified based on their physical meanings and their importance in circuit operation. The impact of process and design variations is embedded into these key points using analytical expressions. During the simulation, the entire I-V and C-V curves are interpolated from these points with simple polynomial formulas. This novel approach significantly enhances the simulation speed with sufficient accuracy. The model is implemented in Verilog-A to support generic circuit simulators. The accuracy and convergence of the proposed model are comprehensively evaluated through a set of benchmark circuits, including nand, a pass-gate, latches, AOI, ring oscillators, and an adder. Compared to SPICE simulations with the BSIM models, the simulation time can be reduced by 7 × in transient analysis and more than 9 × in Monte-Carlo simulations.

AB - In this paper, a new approach of transistor modeling is developed for fast statistical circuit simulation in the presence of variations. For both the I-V and C-V characteristics of a transistor, finite data points are identified based on their physical meanings and their importance in circuit operation. The impact of process and design variations is embedded into these key points using analytical expressions. During the simulation, the entire I-V and C-V curves are interpolated from these points with simple polynomial formulas. This novel approach significantly enhances the simulation speed with sufficient accuracy. The model is implemented in Verilog-A to support generic circuit simulators. The accuracy and convergence of the proposed model are comprehensively evaluated through a set of benchmark circuits, including nand, a pass-gate, latches, AOI, ring oscillators, and an adder. Compared to SPICE simulations with the BSIM models, the simulation time can be reduced by 7 × in transient analysis and more than 9 × in Monte-Carlo simulations.

KW - Circuit simulation

KW - Finite-point-based model

KW - Process variation

KW - Speed

KW - Statistical analysis

KW - Transistor model

UR - http://www.scopus.com/inward/record.url?scp=70349744045&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349744045&partnerID=8YFLogxK

U2 - 10.1109/TVLSI.2008.2005061

DO - 10.1109/TVLSI.2008.2005061

M3 - Article

AN - SCOPUS:70349744045

SN - 1063-8210

VL - 17

SP - 1470

EP - 1480

JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems

JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems

IS - 10

M1 - 4801560

ER -

Finite-point-based transistor model: A new approach to fast circuit simulation

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