@inproceedings{79262fe6711645db95a076c6e2c10728,
title = "Fine structure characteristics of semiconductor laser diode coupled to an external cavity",
abstract = "A semiconductor laser diode with a nominal relaxation oscillation frequency of 6 GHz with an anti-reflection coating on one facet is coupled to an external high Q cavity with the fundamental resonance set to 5 GHz. The laser diode is mounted in a custom microstrip fixture and is driven by a HP-851OA network analyzer. The experimental and theoretical results show enhancement greater than 25 dB at the external cavity resonance frequencies. The results also show holes near the resonance frequencies which may affect the useful bandwidth.",
author = "Ali Ghiasi and Anand Gopinath",
year = "1991",
doi = "10.1117/12.50909",
language = "English (US)",
isbn = "0819407143",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",
pages = "170--174",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Integrated Optical Circuits ; Conference date: 03-09-1991 Through 04-09-1991",
}