Fine structure characteristics of semiconductor laser diode coupled to an external cavity

Ali Ghiasi, Anand Gopinath

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A semiconductor laser diode with a nominal relaxation oscillation frequency of 6 GHz with an anti-reflection coating on one facet is coupled to an external high Q cavity with the fundamental resonance set to 5 GHz. The laser diode is mounted in a custom microstrip fixture and is driven by a HP-851OA network analyzer. The experimental and theoretical results show enhancement greater than 25 dB at the external cavity resonance frequencies. The results also show holes near the resonance frequencies which may affect the useful bandwidth.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages170-174
Number of pages5
ISBN (Print)0819407143, 9780819407146
DOIs
StatePublished - 1991
EventIntegrated Optical Circuits - Boston, MA, USA
Duration: Sep 3 1991Sep 4 1991

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1583
ISSN (Print)0277-786X

Other

OtherIntegrated Optical Circuits
CityBoston, MA, USA
Period9/3/919/4/91

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