Slow, nonexponential relaxation of electrical transport accompanied by memory effects can be induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. This behavior, which appears to be a form of space charge limited current flow, is found in extremely thin films on the insulating side of the superconductor-insulator transition.
|Original language||English (US)|
|Title of host publication||Physica Status Solidi C: Conferences|
|Number of pages||4|
|State||Published - 2004|