Field emission diodes using sharp vertical edge structure

S. M. Zurn, P. J. Schiller, D. E. Glumac, Q. Mei, D. L. Polla

Research output: Contribution to journalConference article

Abstract

Field emission diodes with sharp vertical edges have been fabricated for possible future cathodoluminescence and high frequency device applications. These devices are formed using self-aligned planar processing methods based on conformal thin film deposition techniques thereby eliminating many of the fabrication difficulties and performance variation associated with other previously used fabrication methods. Recessed sealed vacuum cavities have been formed as part of the processing for some of these devices thereby eliminating the need for external vacuum pumping.

Original languageEnglish (US)
Pages (from-to)27-30
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 11 1994Dec 14 1994

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    Zurn, S. M., Schiller, P. J., Glumac, D. E., Mei, Q., & Polla, D. L. (1994). Field emission diodes using sharp vertical edge structure. Technical Digest - International Electron Devices Meeting, 27-30.