Field-effect transistors with layer-by-layer self-assembled nanoparticle thin films as channel and gate dielectric

This letter reports the fabrication of inorganic field-effect transistors (FET) combing "bottom-up" layer-by-layer (LbL) nanoself-assembly and "top-down" micromanufacturing techniques. The self-assembled multilayer of In2 O3 and Si O2 nanoparticles, patterned by photolithography and lift-off methods, serve as channels and insulating layers, respectively. This FET works at an accumulation mode, with a threshold voltage of -1.25 V, a carrier mobility of 4.24× 10-3 cm2 V s, and an on/off current ratio of 102. Due to the simple, low-cost, and low-temperature features of the LbL nanoself-assembly technique that greatly eliminates expensive and complex facilities, this approach is particularly suitable for the very inexpensive FET fabrication.