Projects per year
Abstract
Here we report field-effect modulation of solution electrochemistry at 5 nm thick ZnO working electrodes prepared on SiO2/degenerately doped Si gates. We find that ultrathin ZnO behaves like a 2D semiconductor, in which charge carriers electrostatically induced by the back gate lead to band edge shift at the front electrode/electrolyte interface. This, in turn, manipulates the charge transfer kinetics on the electrode at a given electrode potential. Experimental results and the proposed model indicate that band edge alignment can be effectively modulated by 0.1-0.4 eV depending on the density of states in the semiconductor and the capacitance of the gate/dielectric stack.
Original language | English (US) |
---|---|
Pages (from-to) | 7220-7223 |
Number of pages | 4 |
Journal | Journal of the American Chemical Society |
Volume | 138 |
Issue number | 23 |
DOIs | |
State | Published - Jun 15 2016 |
Bibliographical note
Publisher Copyright:© 2016 American Chemical Society.
MRSEC Support
- Shared
PubMed: MeSH publication types
- Journal Article
Fingerprint
Dive into the research topics of 'Field Effect Modulation of Outer-Sphere Electrochemistry at Back-Gated, Ultrathin ZnO Electrodes'. Together they form a unique fingerprint.Projects
- 2 Finished
-
University of Minnesota MRSEC (DMR-1420013)
Lodge, T. P. (PI)
11/1/14 → 10/31/20
Project: Research project
-
MRSEC IRG-2: Sustainable Nanocrystal Materials
Kortshagen, U. R. (Coordinator), Aydil, E. S. (Senior Investigator), Campbell, S. A. (Senior Investigator), Francis, L. F. (Senior Investigator), Haynes, C. L. (Senior Investigator), Hogan, C. (Senior Investigator), Mkhoyan, A. (Senior Investigator), Shklovskii, B. I. (Senior Investigator) & Wang, X. (Senior Investigator)
11/1/14 → 10/31/20
Project: Research project