Field effect conductance of conducting polymer nanofibers

Jeffrey A. Merlo, C. Daniel Frisbie

Research output: Contribution to journalArticle

140 Scopus citations

Abstract

We report on the electrical conductance of nanofibers of regioregular poly(3-hexylthiophene) (RRP3HT) as a function of gate-induced charge. Nanofibers of RRP3HT were deposited onto SiO2/Si substrates by casting from dilute p-xylene solutions. An analysis of the nanofibers by atomic force microscopy revealed fiber lengths of 0.2-5 μm, heights of 3-7 nm, and widths of approximately 15 nm. A field effect transistor geometry was used to probe the conductance of webs of nanofibers and single nanofibers; in these measurements, gold electrodes served as source and drain contacts, and the doped SiO2/Si substrate served as the gate. Temperature-dependent transport studies on webs of nanofibers revealed an activation energy of 108 meV at a gate-induced hole density of 3.8 × 1012 charges/cm2. Pretreating SiO2 with a hydrophobic hexamethyldisilazane (HMDS) layer reduced the activation energy to 65 meV at the same charge density. The turn-on gate voltage on treated and untreated substrates increased in magnitude with decreasing temperature. Conductance measurements on single nanofibers on HMDS-treated SiO2 yielded hole mobilities as high as 0.6 cm2/Vs with on/off current ratios greater than 103.

Original languageEnglish (US)
Pages (from-to)2674-2680
Number of pages7
JournalJournal of Polymer Science, Part B: Polymer Physics
Volume41
Issue number21
DOIs
StatePublished - Nov 1 2003

Keywords

  • Atomic force microscopy (AFM)
  • Charge transport
  • Conducting polymers
  • Field effect transistor
  • Nanofibers
  • Regioregular poly(3-hexylthiophene)

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