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Few-layer black phosporous PMOSFETs with BN/AI2O3 bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm
L. M. Yang, G. Qiu, M. W. Si, A. R. Charnas, C. A. Milligan, D. Y. Zemlyanov, H. Zhou, Y. C. Du, Y. M. Lin, W. Tsai, Qing Paduano, M. Snure, P. D. Ye
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
19
Scopus
citations