Few-layer black phosporous PMOSFETs with BN/AI2O3 bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm

L. M. Yang; G. Qiu; M. W. Si; A. R. Charnas; C. A. Milligan; D. Y. Zemlyanov; H. Zhou; Y. C. Du; Y. M. Lin; W. Tsai; Qing Paduano; M. Snure; P. D. Ye

doi:10.1109/IEDM.2016.7838354

Few-layer black phosporous PMOSFETs with BN/AI₂O₃ bilayer gate dielectric: Achieving I_on=850μA/μm, g_m=340μS/μm, and R_c=0.58kΩ·μm

L. M. Yang
, G. Qiu
, M. W. Si
, A. R. Charnas
, C. A. Milligan
, D. Y. Zemlyanov
, H. Zhou
, Y. C. Du
, Y. M. Lin
, W. Tsai
, Qing Paduano
, M. Snure
, P. D. Ye

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

19 Scopus citations

Abstract

In this paper, high-performance few-layer black phosphorus (BP) PMOSFETs have been demonstrated by using MOCVD BN and ALD Al₂O₃ as the top-gate dielectric as well as the passivation layer. Highest Ion of 850μA/μm (V_ds = -1.8 V) and g_m of 340μS/μm (Vds = -0.8 V) have been achieved with the 200nm chancel length (L_ch) devices. Record low contact resistance (R_c) of 0.58kΩ·μm has been obtained on BP transistors by contact engineering. The gate leakage of the BN/Al₂O₃ bilayer gate dielectric is less than 10^-12A/μm² (V_g = -1V) with an EOT of 3nm. SS and hysteresis voltage as low as 70mV/dec and 0.1V have been achieved, indicating a high quality interface between BP and BN.

Original language	English (US)
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5.5.1-5.5.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838354
State	Published - Jan 31 2017
Externally published	Yes
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: Dec 3 2016 → Dec 7 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	12/3/16 → 12/7/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Publisher link

10.1109/IEDM.2016.7838354

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Cite this

Yang, L. M., Qiu, G., Si, M. W., Charnas, A. R., Milligan, C. A., Zemlyanov, D. Y., Zhou, H., Du, Y. C., Lin, Y. M., Tsai, W., Paduano, Q., Snure, M., & Ye, P. D. (2017). Few-layer black phosporous PMOSFETs with BN/AI₂O₃ bilayer gate dielectric: Achieving I_on=850μA/μm, g_m=340μS/μm, and R_c=0.58kΩ·μm. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 5.5.1-5.5.4). Article 7838354 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838354

Few-layer black phosporous PMOSFETs with BN/AI₂O₃ bilayer gate dielectric: Achieving I_on=850μA/μm, g_m=340μS/μm, and R_c=0.58kΩ·μm. / Yang, L. M.; Qiu, G.; Si, M. W. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 5.5.1-5.5.4 7838354 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, LM, Qiu, G, Si, MW, Charnas, AR, Milligan, CA, Zemlyanov, DY, Zhou, H, Du, YC, Lin, YM, Tsai, W, Paduano, Q, Snure, M & Ye, PD 2017, Few-layer black phosporous PMOSFETs with BN/AI₂O₃ bilayer gate dielectric: Achieving I_on=850μA/μm, g_m=340μS/μm, and R_c=0.58kΩ·μm. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838354, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 5.5.1-5.5.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 12/3/16. https://doi.org/10.1109/IEDM.2016.7838354

Yang LM, Qiu G, Si MW, Charnas AR, Milligan CA, Zemlyanov DY et al. Few-layer black phosporous PMOSFETs with BN/AI₂O₃ bilayer gate dielectric: Achieving I_on=850μA/μm, g_m=340μS/μm, and R_c=0.58kΩ·μm. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 5.5.1-5.5.4. 7838354. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838354

Yang, L. M. ; Qiu, G. ; Si, M. W. et al. / Few-layer black phosporous PMOSFETs with BN/AI₂O₃ bilayer gate dielectric : Achieving I_on=850μA/μm, g_m=340μS/μm, and R_c=0.58kΩ·μm. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 5.5.1-5.5.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Few-layer black phosporous PMOSFETs with BN/AI2O3 bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm",

abstract = "In this paper, high-performance few-layer black phosphorus (BP) PMOSFETs have been demonstrated by using MOCVD BN and ALD Al2O3 as the top-gate dielectric as well as the passivation layer. Highest Ion of 850μA/μm (Vds = -1.8 V) and gm of 340μS/μm (Vds = -0.8 V) have been achieved with the 200nm chancel length (Lch) devices. Record low contact resistance (Rc) of 0.58kΩ·μm has been obtained on BP transistors by contact engineering. The gate leakage of the BN/Al2O3 bilayer gate dielectric is less than 10-12A/μm2 (Vg = -1V) with an EOT of 3nm. SS and hysteresis voltage as low as 70mV/dec and 0.1V have been achieved, indicating a high quality interface between BP and BN.",

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AB - In this paper, high-performance few-layer black phosphorus (BP) PMOSFETs have been demonstrated by using MOCVD BN and ALD Al2O3 as the top-gate dielectric as well as the passivation layer. Highest Ion of 850μA/μm (Vds = -1.8 V) and gm of 340μS/μm (Vds = -0.8 V) have been achieved with the 200nm chancel length (Lch) devices. Record low contact resistance (Rc) of 0.58kΩ·μm has been obtained on BP transistors by contact engineering. The gate leakage of the BN/Al2O3 bilayer gate dielectric is less than 10-12A/μm2 (Vg = -1V) with an EOT of 3nm. SS and hysteresis voltage as low as 70mV/dec and 0.1V have been achieved, indicating a high quality interface between BP and BN.

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