Ferromagnetism and Half-Metallicity in a High-Band-Gap Hexagonal Boron Nitride System

Indrani Choudhuri, Biswarup Pathak

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Metal-free half-metallicity is the subject of intense research in the field of spintronics devices. Using density functional theoretical calculations, atom-thin hexagonal boron nitride (h-BN)-based systems are studied for possible spintronics applications. Ferromagnetism is observed in patterned C-doped h-BN systems. Interestingly, such a patterned C-doped h-BN exhibits half-metallicity with a Curie temperature of approximately 324 K at a particular C-doping concentration. It shows half-metallicity more than metal-free systems studied to date. Thus, such a BN-based system can be used to achieve a 100 % spin-polarised current at the Fermi level. Furthermore, this C-doped system shows excellent dynamical, thermal, and mechanical properties. Therefore, a stable metal-free planar ferromagnetic half-metallic h-BN-based system is proposed for use in room-temperature spintronics devices.

Original languageEnglish (US)
Pages (from-to)153-161
Number of pages9
JournalChemPhysChem
Volume19
Issue number1
DOIs
StatePublished - Jan 5 2018

Fingerprint

Ferromagnetism
boron nitrides
Magnetoelectronics
ferromagnetism
metallicity
Energy gap
Metals
metals
Curie temperature
Fermi level
Density functional theory
Thermodynamic properties
thermodynamic properties
Doping (additives)
mechanical properties
Atoms
Mechanical properties
boron nitride
room temperature
atoms

Keywords

  • carbon doping
  • ferromagnetism
  • half-metallicity
  • hexagonal boron nitride
  • spintronics

PubMed: MeSH publication types

  • Journal Article

Cite this

Ferromagnetism and Half-Metallicity in a High-Band-Gap Hexagonal Boron Nitride System. / Choudhuri, Indrani; Pathak, Biswarup.

In: ChemPhysChem, Vol. 19, No. 1, 05.01.2018, p. 153-161.

Research output: Contribution to journalArticle

@article{cc867b53363e46f4b292d774aa1e0867,
title = "Ferromagnetism and Half-Metallicity in a High-Band-Gap Hexagonal Boron Nitride System",
abstract = "Metal-free half-metallicity is the subject of intense research in the field of spintronics devices. Using density functional theoretical calculations, atom-thin hexagonal boron nitride (h-BN)-based systems are studied for possible spintronics applications. Ferromagnetism is observed in patterned C-doped h-BN systems. Interestingly, such a patterned C-doped h-BN exhibits half-metallicity with a Curie temperature of approximately 324 K at a particular C-doping concentration. It shows half-metallicity more than metal-free systems studied to date. Thus, such a BN-based system can be used to achieve a 100 {\%} spin-polarised current at the Fermi level. Furthermore, this C-doped system shows excellent dynamical, thermal, and mechanical properties. Therefore, a stable metal-free planar ferromagnetic half-metallic h-BN-based system is proposed for use in room-temperature spintronics devices.",
keywords = "carbon doping, ferromagnetism, half-metallicity, hexagonal boron nitride, spintronics",
author = "Indrani Choudhuri and Biswarup Pathak",
year = "2018",
month = "1",
day = "5",
doi = "10.1002/cphc.201700759",
language = "English (US)",
volume = "19",
pages = "153--161",
journal = "ChemPhysChem",
issn = "1439-4235",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Ferromagnetism and Half-Metallicity in a High-Band-Gap Hexagonal Boron Nitride System

AU - Choudhuri, Indrani

AU - Pathak, Biswarup

PY - 2018/1/5

Y1 - 2018/1/5

N2 - Metal-free half-metallicity is the subject of intense research in the field of spintronics devices. Using density functional theoretical calculations, atom-thin hexagonal boron nitride (h-BN)-based systems are studied for possible spintronics applications. Ferromagnetism is observed in patterned C-doped h-BN systems. Interestingly, such a patterned C-doped h-BN exhibits half-metallicity with a Curie temperature of approximately 324 K at a particular C-doping concentration. It shows half-metallicity more than metal-free systems studied to date. Thus, such a BN-based system can be used to achieve a 100 % spin-polarised current at the Fermi level. Furthermore, this C-doped system shows excellent dynamical, thermal, and mechanical properties. Therefore, a stable metal-free planar ferromagnetic half-metallic h-BN-based system is proposed for use in room-temperature spintronics devices.

AB - Metal-free half-metallicity is the subject of intense research in the field of spintronics devices. Using density functional theoretical calculations, atom-thin hexagonal boron nitride (h-BN)-based systems are studied for possible spintronics applications. Ferromagnetism is observed in patterned C-doped h-BN systems. Interestingly, such a patterned C-doped h-BN exhibits half-metallicity with a Curie temperature of approximately 324 K at a particular C-doping concentration. It shows half-metallicity more than metal-free systems studied to date. Thus, such a BN-based system can be used to achieve a 100 % spin-polarised current at the Fermi level. Furthermore, this C-doped system shows excellent dynamical, thermal, and mechanical properties. Therefore, a stable metal-free planar ferromagnetic half-metallic h-BN-based system is proposed for use in room-temperature spintronics devices.

KW - carbon doping

KW - ferromagnetism

KW - half-metallicity

KW - hexagonal boron nitride

KW - spintronics

UR - http://www.scopus.com/inward/record.url?scp=85034108757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85034108757&partnerID=8YFLogxK

U2 - 10.1002/cphc.201700759

DO - 10.1002/cphc.201700759

M3 - Article

C2 - 29028146

AN - SCOPUS:85034108757

VL - 19

SP - 153

EP - 161

JO - ChemPhysChem

JF - ChemPhysChem

SN - 1439-4235

IS - 1

ER -