Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O3/LaNiO3 thin films on single crystal and platinized-Si substrates

C. R. Cho, L. F. Francis, D. L. Polla

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Electrically conductive LaNiO3 (LNO) and ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on single crystal (100)SrTiO3 (STO), (100)LaAlO3 (LAO), and Pt/Ti/SiO2/Si(100) substrates using solution deposition routes. X-ray diffraction and scanning electron microscopy were used to investigate the crystallinity and microstructure of the films. The surface bonding states of the PZT and LNO films were determined by X-ray photoelectron spectroscopy (XPS). The average room-temperature dielectric constant of the PZT films, measured at 1 kHz, was in the range 905-1002 and the dissipation factor was below 0.03 for all films. The remnant polarization and coercive electric field of the PZT/LNO films deposited on (100)STO, (100)LAO, and Pt/Ti/SiO2/Si substrates were 30, 32 and 19 μC/cm2, and 84, 87 and 57 kV/cm, at applied electric field of 450 kV/cm, respectively.

Original languageEnglish (US)
Pages (from-to)125-130
Number of pages6
JournalMaterials Letters
Issue number2
StatePublished - Jan 1999


  • 77.22.Ch
  • 77.80.Dj
  • 81.15.Lm
  • 82.80.Pv
  • 85.50.Na
  • Conductive oxide
  • Ferroelectric
  • Hysteresis loop
  • Pb(Zr, Ti)O/LaNiO thin film
  • Sol-gel
  • Surface states

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