Femtosecond-scale response of semiconductors to laser pulses

R. E. Allen, A. Burzo, T. Dumitricǎ

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


We report simulations of the response of InSb, GaAs, and Si to 70-femtosecond laser pulses of various intensities. In agreement with the experiments of Mazur and coworkers, and other groups, there is a nonthermal phase transition for each of these semiconductors above a threshold intensity. Our simulations employ tight-binding electron-ion dynamics (TED), a technique which is briefly described in the text. In the experimental pump-probe observations, the dielectric function ε (ω) and the second-order susceptibility χ(2) can be measured. These same quantities can be calculated during a TED simulation, and there is good agreement in the behavior with respect to both time and frequency. The simulations provide much additional microscopic information which is experimentally inaccessible: for example, the time-dependence of the atomic pair-correlation function, electronic energy bands, occupancies of excited states, kinetic energy of the atoms, and excursions of atoms from their initial positions.

Original languageEnglish (US)
Pages (from-to)123-137
Number of pages15
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Jan 1 2001
EventUltrafast Phenomena in Semiconductors V - San Jose, CA, United States
Duration: Jan 25 2001Jan 26 2001


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