FDSOI radiation dosimeters

Jeng Bang Yau; Michael S. Gordon; Kenneth P. Rodbell; Steven J. Koester; Patrick W. Dehaven; Dae Gyu Park; Wilfried E. Haensch

doi:10.1109/VTSA.2011.5872260

FDSOI radiation dosimeters

Jeng Bang Yau, Michael S. Gordon, Kenneth P. Rodbell, Steven J. Koester, Patrick W. Dehaven, Dae Gyu Park, Wilfried E. Haensch

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

We describe the fabrication of radiation dosimeters utilizing fully-depleted silicon-on insulator (FDSOI) substrates, and further demonstrate the detection of various ionizing radiation types including protons, a-particles, and X-rays by the threshold voltage (Vth) changes caused by the radiation-induced charge trapped in the buried oxide. Our FDSOI dosimeter exhibits a sensitivity of 3mV/krad(SiO2) to 1MeV protons and 10mV/krad(SiO2) to 8keV X-rays, respectively. The comparison of FDSOI dosimeter with existing bulk-Si detectors shows comparable sensitivity, with the additional advantage of up to 90 days of BOX charge retention time. Our findings are encouraging and provide innovative implementation of SOI technology in microelectronics radiation dosimetry while maintaining CMOS process compatibility.

Original language	English (US)
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	126-129
Number of pages	4
DOIs	https://doi.org/10.1109/VTSA.2011.5872260
State	Published - 2011
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China Duration: Apr 25 2011 → Apr 27 2011

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/25/11 → 4/27/11

Publisher link

10.1109/VTSA.2011.5872260

Find It

Find It at U of M Libraries

Cite this

Yau, J. B., Gordon, M. S., Rodbell, K. P., Koester, S. J., Dehaven, P. W., Park, D. G., & Haensch, W. E. (2011). FDSOI radiation dosimeters. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 126-129). Article 5872260 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872260

FDSOI radiation dosimeters. / Yau, Jeng Bang; Gordon, Michael S.; Rodbell, Kenneth P. et al.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 126-129 5872260 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yau, JB, Gordon, MS, Rodbell, KP, Koester, SJ, Dehaven, PW, Park, DG & Haensch, WE 2011, FDSOI radiation dosimeters. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872260, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 126-129, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 4/25/11. https://doi.org/10.1109/VTSA.2011.5872260

@inproceedings{28d2093829654be2ad0613c7c6eadaf6,

title = "FDSOI radiation dosimeters",

abstract = "We describe the fabrication of radiation dosimeters utilizing fully-depleted silicon-on insulator (FDSOI) substrates, and further demonstrate the detection of various ionizing radiation types including protons, a-particles, and X-rays by the threshold voltage (Vth) changes caused by the radiation-induced charge trapped in the buried oxide. Our FDSOI dosimeter exhibits a sensitivity of 3mV/krad(SiO2) to 1MeV protons and 10mV/krad(SiO2) to 8keV X-rays, respectively. The comparison of FDSOI dosimeter with existing bulk-Si detectors shows comparable sensitivity, with the additional advantage of up to 90 days of BOX charge retention time. Our findings are encouraging and provide innovative implementation of SOI technology in microelectronics radiation dosimetry while maintaining CMOS process compatibility.",

author = "Yau, {Jeng Bang} and Gordon, {Michael S.} and Rodbell, {Kenneth P.} and Koester, {Steven J.} and Dehaven, {Patrick W.} and Park, {Dae Gyu} and Haensch, {Wilfried E.}",

year = "2011",

doi = "10.1109/VTSA.2011.5872260",

language = "English (US)",

isbn = "9781424484928",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "126--129",

booktitle = "Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011",

note = "2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 ; Conference date: 25-04-2011 Through 27-04-2011",

}

TY - GEN

T1 - FDSOI radiation dosimeters

AU - Yau, Jeng Bang

AU - Gordon, Michael S.

AU - Rodbell, Kenneth P.

AU - Koester, Steven J.

AU - Dehaven, Patrick W.

AU - Park, Dae Gyu

AU - Haensch, Wilfried E.

PY - 2011

Y1 - 2011

N2 - We describe the fabrication of radiation dosimeters utilizing fully-depleted silicon-on insulator (FDSOI) substrates, and further demonstrate the detection of various ionizing radiation types including protons, a-particles, and X-rays by the threshold voltage (Vth) changes caused by the radiation-induced charge trapped in the buried oxide. Our FDSOI dosimeter exhibits a sensitivity of 3mV/krad(SiO2) to 1MeV protons and 10mV/krad(SiO2) to 8keV X-rays, respectively. The comparison of FDSOI dosimeter with existing bulk-Si detectors shows comparable sensitivity, with the additional advantage of up to 90 days of BOX charge retention time. Our findings are encouraging and provide innovative implementation of SOI technology in microelectronics radiation dosimetry while maintaining CMOS process compatibility.

AB - We describe the fabrication of radiation dosimeters utilizing fully-depleted silicon-on insulator (FDSOI) substrates, and further demonstrate the detection of various ionizing radiation types including protons, a-particles, and X-rays by the threshold voltage (Vth) changes caused by the radiation-induced charge trapped in the buried oxide. Our FDSOI dosimeter exhibits a sensitivity of 3mV/krad(SiO2) to 1MeV protons and 10mV/krad(SiO2) to 8keV X-rays, respectively. The comparison of FDSOI dosimeter with existing bulk-Si detectors shows comparable sensitivity, with the additional advantage of up to 90 days of BOX charge retention time. Our findings are encouraging and provide innovative implementation of SOI technology in microelectronics radiation dosimetry while maintaining CMOS process compatibility.

UR - http://www.scopus.com/inward/record.url?scp=79959957527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959957527&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2011.5872260

DO - 10.1109/VTSA.2011.5872260

M3 - Conference contribution

AN - SCOPUS:79959957527

SN - 9781424484928

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 126

EP - 129

BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

T2 - 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

Y2 - 25 April 2011 through 27 April 2011

ER -

FDSOI radiation dosimeters

Abstract

Publication series

Other

Publisher link

Find It

Other files and links

Fingerprint

Cite this