FDSOI radiation dosimeters

Jeng Bang Yau, Michael S. Gordon, Kenneth P. Rodbell, Steven J. Koester, Patrick W. Dehaven, Dae Gyu Park, Wilfried E. Haensch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

We describe the fabrication of radiation dosimeters utilizing fully-depleted silicon-on insulator (FDSOI) substrates, and further demonstrate the detection of various ionizing radiation types including protons, a-particles, and X-rays by the threshold voltage (Vth) changes caused by the radiation-induced charge trapped in the buried oxide. Our FDSOI dosimeter exhibits a sensitivity of 3mV/krad(SiO2) to 1MeV protons and 10mV/krad(SiO2) to 8keV X-rays, respectively. The comparison of FDSOI dosimeter with existing bulk-Si detectors shows comparable sensitivity, with the additional advantage of up to 90 days of BOX charge retention time. Our findings are encouraging and provide innovative implementation of SOI technology in microelectronics radiation dosimetry while maintaining CMOS process compatibility.

Original languageEnglish (US)
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages126-129
Number of pages4
DOIs
StatePublished - Jul 11 2011
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China
Duration: Apr 25 2011Apr 27 2011

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan, Province of China
CityHsinchu
Period4/25/114/27/11

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