TY - GEN
T1 - FDSOI radiation dosimeters
AU - Yau, Jeng Bang
AU - Gordon, Michael S.
AU - Rodbell, Kenneth P.
AU - Koester, Steven J.
AU - Dehaven, Patrick W.
AU - Park, Dae Gyu
AU - Haensch, Wilfried E.
PY - 2011
Y1 - 2011
N2 - We describe the fabrication of radiation dosimeters utilizing fully-depleted silicon-on insulator (FDSOI) substrates, and further demonstrate the detection of various ionizing radiation types including protons, a-particles, and X-rays by the threshold voltage (Vth) changes caused by the radiation-induced charge trapped in the buried oxide. Our FDSOI dosimeter exhibits a sensitivity of 3mV/krad(SiO2) to 1MeV protons and 10mV/krad(SiO2) to 8keV X-rays, respectively. The comparison of FDSOI dosimeter with existing bulk-Si detectors shows comparable sensitivity, with the additional advantage of up to 90 days of BOX charge retention time. Our findings are encouraging and provide innovative implementation of SOI technology in microelectronics radiation dosimetry while maintaining CMOS process compatibility.
AB - We describe the fabrication of radiation dosimeters utilizing fully-depleted silicon-on insulator (FDSOI) substrates, and further demonstrate the detection of various ionizing radiation types including protons, a-particles, and X-rays by the threshold voltage (Vth) changes caused by the radiation-induced charge trapped in the buried oxide. Our FDSOI dosimeter exhibits a sensitivity of 3mV/krad(SiO2) to 1MeV protons and 10mV/krad(SiO2) to 8keV X-rays, respectively. The comparison of FDSOI dosimeter with existing bulk-Si detectors shows comparable sensitivity, with the additional advantage of up to 90 days of BOX charge retention time. Our findings are encouraging and provide innovative implementation of SOI technology in microelectronics radiation dosimetry while maintaining CMOS process compatibility.
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U2 - 10.1109/VTSA.2011.5872260
DO - 10.1109/VTSA.2011.5872260
M3 - Conference contribution
AN - SCOPUS:79959957527
SN - 9781424484928
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 126
EP - 129
BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
T2 - 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Y2 - 25 April 2011 through 27 April 2011
ER -