FDSOI CMOS with dual backgate control for performance and power modulation

Jeng Bang Yau; Jin Cai; Leathen Shi; Robert H. Dennard; Arvind Kumar; Katherine L. Saenger; Alexander Reznicek; Paul M. Solomon; Qiqing Ouyang; Steven Koester; Wilfried E. Haensch

doi:10.1109/VTSA.2009.5159302

FDSOI CMOS with dual backgate control for performance and power modulation

Jeng Bang Yau
, Jin Cai
, Leathen Shi
, Robert H. Dennard
, Arvind Kumar
, Katherine L. Saenger
, Alexander Reznicek
, Paul M. Solomon
, Qiqing Ouyang
, Steven Koester
, Wilfried E. Haensch

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using independent backgate controls for nFET and pFET. The thin BOX facilities an effective modulation of ring characteristics with small (1-2V) independent backgate voltages. Leakage current per stage can be reduced by more than 100x with 30% increase of inverter delay. In addition the inverter delay can be improved by 15% with 2x increase of the stand-by current. Compatible with conventional CMOS process, our results suggest the backgate technology, an additional knob for power/performance optimization and variability control, is attractive for continued CMOS scaling.

Original language	English (US)
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	84-85
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159302
State	Published - Dec 1 2009
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan, Province of China Duration: Apr 27 2009 → Apr 29 2009

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/27/09 → 4/29/09

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10.1109/VTSA.2009.5159302

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Yau, J. B., Cai, J., Shi, L., Dennard, R. H., Kumar, A., Saenger, K. L., Reznicek, A., Solomon, P. M., Ouyang, Q., Koester, S., & Haensch, W. E. (2009). FDSOI CMOS with dual backgate control for performance and power modulation. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 84-85). Article 5159302 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159302

FDSOI CMOS with dual backgate control for performance and power modulation. / Yau, Jeng Bang; Cai, Jin; Shi, Leathen et al.
2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 84-85 5159302 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yau, JB, Cai, J, Shi, L, Dennard, RH, Kumar, A, Saenger, KL, Reznicek, A, Solomon, PM, Ouyang, Q, Koester, S & Haensch, WE 2009, FDSOI CMOS with dual backgate control for performance and power modulation. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159302, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 84-85, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, Province of China, 4/27/09. https://doi.org/10.1109/VTSA.2009.5159302

Yau JB, Cai J, Shi L, Dennard RH, Kumar A, Saenger KL et al. FDSOI CMOS with dual backgate control for performance and power modulation. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 84-85. 5159302. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2009.5159302

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title = "FDSOI CMOS with dual backgate control for performance and power modulation",

abstract = "We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using independent backgate controls for nFET and pFET. The thin BOX facilities an effective modulation of ring characteristics with small (1-2V) independent backgate voltages. Leakage current per stage can be reduced by more than 100x with 30\% increase of inverter delay. In addition the inverter delay can be improved by 15\% with 2x increase of the stand-by current. Compatible with conventional CMOS process, our results suggest the backgate technology, an additional knob for power/performance optimization and variability control, is attractive for continued CMOS scaling.",

author = "Yau, \{Jeng Bang\} and Jin Cai and Leathen Shi and Dennard, \{Robert H.\} and Arvind Kumar and Saenger, \{Katherine L.\} and Alexander Reznicek and Solomon, \{Paul M.\} and Qiqing Ouyang and Steven Koester and Haensch, \{Wilfried E.\}",

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doi = "10.1109/VTSA.2009.5159302",

language = "English (US)",

isbn = "9781424427857",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

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booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

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TY - GEN

T1 - FDSOI CMOS with dual backgate control for performance and power modulation

AU - Yau, Jeng Bang

AU - Cai, Jin

AU - Shi, Leathen

AU - Dennard, Robert H.

AU - Kumar, Arvind

AU - Saenger, Katherine L.

AU - Reznicek, Alexander

AU - Solomon, Paul M.

AU - Ouyang, Qiqing

AU - Koester, Steven

AU - Haensch, Wilfried E.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using independent backgate controls for nFET and pFET. The thin BOX facilities an effective modulation of ring characteristics with small (1-2V) independent backgate voltages. Leakage current per stage can be reduced by more than 100x with 30% increase of inverter delay. In addition the inverter delay can be improved by 15% with 2x increase of the stand-by current. Compatible with conventional CMOS process, our results suggest the backgate technology, an additional knob for power/performance optimization and variability control, is attractive for continued CMOS scaling.

AB - We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using independent backgate controls for nFET and pFET. The thin BOX facilities an effective modulation of ring characteristics with small (1-2V) independent backgate voltages. Leakage current per stage can be reduced by more than 100x with 30% increase of inverter delay. In addition the inverter delay can be improved by 15% with 2x increase of the stand-by current. Compatible with conventional CMOS process, our results suggest the backgate technology, an additional knob for power/performance optimization and variability control, is attractive for continued CMOS scaling.

UR - https://www.scopus.com/pages/publications/77950169943

UR - https://www.scopus.com/pages/publications/77950169943#tab=citedBy

U2 - 10.1109/VTSA.2009.5159302

DO - 10.1109/VTSA.2009.5159302

M3 - Conference contribution

AN - SCOPUS:77950169943

SN - 9781424427857

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 84

EP - 85

BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

T2 - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

Y2 - 27 April 2009 through 29 April 2009

ER -

FDSOI CMOS with dual backgate control for performance and power modulation

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