FDSOI CMOS with dual backgate control for performance and power modulation

Jeng Bang Yau, Jin Cai, Leathen Shi, Robert H. Dennard, Arvind Kumar, Katherine L. Saenger, Alexander Reznicek, Paul M. Solomon, Qiqing Ouyang, Steven Koester, Wilfried E. Haensch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using independent backgate controls for nFET and pFET. The thin BOX facilities an effective modulation of ring characteristics with small (1-2V) independent backgate voltages. Leakage current per stage can be reduced by more than 100x with 30% increase of inverter delay. In addition the inverter delay can be improved by 15% with 2x increase of the stand-by current. Compatible with conventional CMOS process, our results suggest the backgate technology, an additional knob for power/performance optimization and variability control, is attractive for continued CMOS scaling.

Original languageEnglish (US)
Title of host publication2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages84-85
Number of pages2
DOIs
StatePublished - Dec 1 2009
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan, Province of China
Duration: Apr 27 2009Apr 29 2009

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
CountryTaiwan, Province of China
CityHsinchu
Period4/27/094/29/09

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