Faulted dipoles ranging in height from 3 to 12 nm in high-purity Ge have been studied by lattice-fringe and weak-bean transmission electron microscopy techniques. Only intrinsic, Z-shape faulted dipoles were observed. Lattice-fringe images of large faulted dipoles, weak-beam images of faulted dipoles, and weak-beam images of faulted dipoles, and weak-beam images of near-edge dislocations yield stacking-fault energies of 78±14 mJ m−2, respectively. When determined from the height and width of faulted dipoles viewed end-on in lattice-fringe images, the value for the stacking-fault energy calculated from anisotropic elasticity theory increases from 78 to 160 mJ m−2 as the height decreases from 6 to 3nm.
|Original language||English (US)|
|Number of pages||19|
|Journal||Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties|
|State||Published - 1980|
Bibliographical noteFunding Information:
This research was supported by DOE Grant No. EG-77-5-02-4441, One of us (CBC) was supported by the NSF through the Materials Science Center at Cornell University. The transmission electron microscope used is part of the Cornell University Materials Science Center central facility for electron microscopy .