Faulted dipoles in germanium A high-resolution transmission electron microscopy study

S. W. Chiang, C. B. Carter, D. L. Kohlstedt

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Faulted dipoles ranging in height from 3 to 12 nm in high-purity Ge have been studied by lattice-fringe and weak-bean transmission electron microscopy techniques. Only intrinsic, Z-shape faulted dipoles were observed. Lattice-fringe images of large faulted dipoles, weak-beam images of faulted dipoles, and weak-beam images of faulted dipoles, and weak-beam images of near-edge dislocations yield stacking-fault energies of 78±14 mJ m−2, respectively. When determined from the height and width of faulted dipoles viewed end-on in lattice-fringe images, the value for the stacking-fault energy calculated from anisotropic elasticity theory increases from 78 to 160 mJ m−2 as the height decreases from 6 to 3nm.

Original languageEnglish (US)
Pages (from-to)103-121
Number of pages19
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume42
Issue number1
DOIs
StatePublished - 1980

Bibliographical note

Funding Information:
This research was supported by DOE Grant No. EG-77-5-02-4441, One of us (CBC) was supported by the NSF through the Materials Science Center at Cornell University. The transmission electron microscope used is part of the Cornell University Materials Science Center central facility for electron microscopy .

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