Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit

Xiaofei Wang; Seung Hwan Song; Ayan Paul; Chris H. Kim

doi:10.1109/IRPS.2014.6861104

Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit

Xiaofei Wang, Seung Hwan Song, Ayan Paul, Chris H. Kim

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

A ring oscillator based circuit for separately characterizing PBTI and NBTI induced frequency shifts is demonstrated in a high-k metal gate process. The proposed design, for the first time, supports AC stress with a realistic recovery condition. Other benefits over the previous works include sub-400 nanosecond measurement time, sub-picosecond resolution and a simple calibration procedure. Detailed stress and recovery measurements under different voltage and temperature test conditions are presented and analyzed.

Original language	English (US)
Title of host publication	2014 IEEE International Reliability Physics Symposium, IRPS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	6B.2.1-6B.2.6
ISBN (Print)	9781479933167
DOIs	https://doi.org/10.1109/IRPS.2014.6861104
State	Published - Jan 1 2014
Event	52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States Duration: Jun 1 2014 → Jun 5 2014

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	52nd IEEE International Reliability Physics Symposium, IRPS 2014
Country	United States
City	Waikoloa, HI
Period	6/1/14 → 6/5/14

Keywords

Aging
high-k metal gate
negative bias temperature instability (NBTI)
positive bias temperature instability (PBTI)

Access

10.1109/IRPS.2014.6861104

Fingerprint Dive into the research topics of 'Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit'. Together they form a unique fingerprint.

Cite this

Wang, X., Song, S. H., Paul, A., & Kim, C. H. (2014). Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014 (pp. 6B.2.1-6B.2.6). [6861104] (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6861104

Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit. / Wang, Xiaofei; Song, Seung Hwan; Paul, Ayan; Kim, Chris H.

2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 6B.2.1-6B.2.6 6861104 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, X, Song, SH, Paul, A & Kim, CH 2014, Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit. in 2014 IEEE International Reliability Physics Symposium, IRPS 2014., 6861104, IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 6B.2.1-6B.2.6, 52nd IEEE International Reliability Physics Symposium, IRPS 2014, Waikoloa, HI, United States, 6/1/14. https://doi.org/10.1109/IRPS.2014.6861104

Wang X, Song SH, Paul A, Kim CH. Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 6B.2.1-6B.2.6. 6861104. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2014.6861104

Wang, Xiaofei ; Song, Seung Hwan ; Paul, Ayan ; Kim, Chris H. / Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit. 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 6B.2.1-6B.2.6 (IEEE International Reliability Physics Symposium Proceedings).

@inproceedings{826085da69d3441190a37a859e1466a0,

title = "Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit",

abstract = "A ring oscillator based circuit for separately characterizing PBTI and NBTI induced frequency shifts is demonstrated in a high-k metal gate process. The proposed design, for the first time, supports AC stress with a realistic recovery condition. Other benefits over the previous works include sub-400 nanosecond measurement time, sub-picosecond resolution and a simple calibration procedure. Detailed stress and recovery measurements under different voltage and temperature test conditions are presented and analyzed.",

keywords = "Aging, high-k metal gate, negative bias temperature instability (NBTI), positive bias temperature instability (PBTI)",

author = "Xiaofei Wang and Song, {Seung Hwan} and Ayan Paul and Kim, {Chris H.}",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/IRPS.2014.6861104",

language = "English (US)",

isbn = "9781479933167",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "6B.2.1--6B.2.6",

booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",

note = "52nd IEEE International Reliability Physics Symposium, IRPS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",

}

TY - GEN

T1 - Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit

AU - Wang, Xiaofei

AU - Song, Seung Hwan

AU - Paul, Ayan

AU - Kim, Chris H.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - A ring oscillator based circuit for separately characterizing PBTI and NBTI induced frequency shifts is demonstrated in a high-k metal gate process. The proposed design, for the first time, supports AC stress with a realistic recovery condition. Other benefits over the previous works include sub-400 nanosecond measurement time, sub-picosecond resolution and a simple calibration procedure. Detailed stress and recovery measurements under different voltage and temperature test conditions are presented and analyzed.

AB - A ring oscillator based circuit for separately characterizing PBTI and NBTI induced frequency shifts is demonstrated in a high-k metal gate process. The proposed design, for the first time, supports AC stress with a realistic recovery condition. Other benefits over the previous works include sub-400 nanosecond measurement time, sub-picosecond resolution and a simple calibration procedure. Detailed stress and recovery measurements under different voltage and temperature test conditions are presented and analyzed.

KW - Aging

KW - high-k metal gate

KW - negative bias temperature instability (NBTI)

KW - positive bias temperature instability (PBTI)

UR - http://www.scopus.com/inward/record.url?scp=84905673520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905673520&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2014.6861104

DO - 10.1109/IRPS.2014.6861104

M3 - Conference contribution

AN - SCOPUS:84905673520

SN - 9781479933167

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 6B.2.1-6B.2.6

BT - 2014 IEEE International Reliability Physics Symposium, IRPS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 52nd IEEE International Reliability Physics Symposium, IRPS 2014

Y2 - 1 June 2014 through 5 June 2014

ER -