Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit

Xiaofei Wang, Seung Hwan Song, Ayan Paul, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

A ring oscillator based circuit for separately characterizing PBTI and NBTI induced frequency shifts is demonstrated in a high-k metal gate process. The proposed design, for the first time, supports AC stress with a realistic recovery condition. Other benefits over the previous works include sub-400 nanosecond measurement time, sub-picosecond resolution and a simple calibration procedure. Detailed stress and recovery measurements under different voltage and temperature test conditions are presented and analyzed.

Original languageEnglish (US)
Title of host publication2014 IEEE International Reliability Physics Symposium, IRPS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6B.2.1-6B.2.6
ISBN (Print)9781479933167
DOIs
StatePublished - Jan 1 2014
Event52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States
Duration: Jun 1 2014Jun 5 2014

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other52nd IEEE International Reliability Physics Symposium, IRPS 2014
CountryUnited States
CityWaikoloa, HI
Period6/1/146/5/14

Keywords

  • Aging
  • high-k metal gate
  • negative bias temperature instability (NBTI)
  • positive bias temperature instability (PBTI)

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