@inproceedings{826085da69d3441190a37a859e1466a0,
title = "Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit",
abstract = "A ring oscillator based circuit for separately characterizing PBTI and NBTI induced frequency shifts is demonstrated in a high-k metal gate process. The proposed design, for the first time, supports AC stress with a realistic recovery condition. Other benefits over the previous works include sub-400 nanosecond measurement time, sub-picosecond resolution and a simple calibration procedure. Detailed stress and recovery measurements under different voltage and temperature test conditions are presented and analyzed.",
keywords = "Aging, high-k metal gate, negative bias temperature instability (NBTI), positive bias temperature instability (PBTI)",
author = "Xiaofei Wang and Song, {Seung Hwan} and Ayan Paul and Kim, {Chris H.}",
year = "2014",
doi = "10.1109/IRPS.2014.6861104",
language = "English (US)",
isbn = "9781479933167",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6B.2.1--6B.2.6",
booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",
note = "52nd IEEE International Reliability Physics Symposium, IRPS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}