Fast and accurate estimation of nano-scaled SRAM read failure probability using Critical Point Sampling

Ik Joon Chang, Kunhyuk Kang, Saibal Mukhopadhyay, Chris H. Kim, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations

Abstract

Variability in process parameters is making accurate estimate of nano-scale SRAM stability an extremely challenging task. In this paper, we propose a new method to detect the read failure in a SRAM cell using Critical Point Sampling technique. Using this technique, we propose two types of read failure probability estimation method, (1) quasi-analytical and (2) completely analytical method. The result shows that our proposed model can achieve high accuracy, while being 20X faster in computational speed. Our method can be applied to different phases of design to reduce the overall design time, and can be used for optimizing the given design in order to obtain a better yield.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 2005 Custom Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages439-442
Number of pages4
ISBN (Print)0780390237, 9780780390232
DOIs
StatePublished - 2005
EventIEEE 2005 Custom Integrated Circuits Conference - San Jose, CA, United States
Duration: Sep 18 2005Sep 21 2005

Publication series

NameProceedings of the Custom Integrated Circuits Conference
Volume2005
ISSN (Print)0886-5930

Other

OtherIEEE 2005 Custom Integrated Circuits Conference
CountryUnited States
CitySan Jose, CA
Period9/18/059/21/05

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