In this paper, a novel method for fabricating a static induction thyristor has been put forward, using silicon direct bonding instead of traditional epitaxy during the construction of a cathode. Thus, an obvious improvement of the breakdown value of gate-cathode junction has been observed and consequently the gate controllability on anode voltage has been enhanced. The bonded interface has been studied. Some adjustments in technology have been adopted to enhance the bonding quality. A way to guarantee the consistency of the breakdown voltage of gate junction with respect to the cathode has been advanced. Some measurements of I-V characteristic of SDB-SITH have been carried out and the practical result is also listed. A comparison between the SDB-SITH and epitaxial SITH has been made, mainly on I-V and the switching time.