Fabrication of power SDB-SITH

Yanfeng Jiang, Changnian Zhang, Xiaobo Zhang

Research output: Contribution to journalArticlepeer-review


In this paper, a novel method for fabricating a static induction thyristor has been put forward, using silicon direct bonding instead of traditional epitaxy during the construction of a cathode. Thus, an obvious improvement of the breakdown value of gate-cathode junction has been observed and consequently the gate controllability on anode voltage has been enhanced. The bonded interface has been studied. Some adjustments in technology have been adopted to enhance the bonding quality. A way to guarantee the consistency of the breakdown voltage of gate junction with respect to the cathode has been advanced. Some measurements of I-V characteristic of SDB-SITH have been carried out and the practical result is also listed. A comparison between the SDB-SITH and epitaxial SITH has been made, mainly on I-V and the switching time.

Original languageEnglish (US)
Pages (from-to)165-170
Number of pages6
JournalSemiconductor Science and Technology
Issue number2
StatePublished - Feb 2005


Dive into the research topics of 'Fabrication of power SDB-SITH'. Together they form a unique fingerprint.

Cite this