Fabrication of Pentacene Organic Field-Effect Transistors Containing SiO2 Nanoparticle Thin Film as the Gate Dielectric

Tianhong Cui; Guirong Liang; Jingshi Shi

Fabrication of Pentacene Organic Field-Effect Transistors Containing SiO₂ Nanoparticle Thin Film as the Gate Dielectric

Tianhong Cui
, Guirong Liang
, Jingshi Shi

Mechanical Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Pentacene organic field-effect transistors (OFETs) were fabricated and investigated with thermal oxide and a self-assembled SiO₂ (SA-SiO₂) nanoparticle thin-film as the gate dielectrics. SA-SiO ₂ film functions well as a gate dielectric with a breakdown field larger than 0.57 MV/cm and leakage current less than 2 nA/mm² with an applied voltage of 20 V. Being a low-cost and low-temperature process, self-assembly is extremely suitable for OFET fabrication. Dual-gate pentacene FETs containing SA-SiO₂ thin-film was presented as a new structure with good performance.

Original language	English (US)
Pages (from-to)	207-210
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 2003
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: Dec 8 2003 → Dec 10 2003

Keywords

Dual-gate
Organic field-effect transistor
Pentacene
Self-assembly
SiO nanoparticle

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@article{d5759015c8eb4d87a8677fadb79488f9,

title = "Fabrication of Pentacene Organic Field-Effect Transistors Containing SiO2 Nanoparticle Thin Film as the Gate Dielectric",

abstract = "Pentacene organic field-effect transistors (OFETs) were fabricated and investigated with thermal oxide and a self-assembled SiO2 (SA-SiO2) nanoparticle thin-film as the gate dielectrics. SA-SiO 2 film functions well as a gate dielectric with a breakdown field larger than 0.57 MV/cm and leakage current less than 2 nA/mm2 with an applied voltage of 20 V. Being a low-cost and low-temperature process, self-assembly is extremely suitable for OFET fabrication. Dual-gate pentacene FETs containing SA-SiO2 thin-film was presented as a new structure with good performance.",

keywords = "Dual-gate, Organic field-effect transistor, Pentacene, Self-assembly, SiO nanoparticle",

author = "Tianhong Cui and Guirong Liang and Jingshi Shi",

year = "2003",

language = "English (US)",

pages = "207--210",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Fabrication of Pentacene Organic Field-Effect Transistors Containing SiO2 Nanoparticle Thin Film as the Gate Dielectric

AU - Cui, Tianhong

AU - Liang, Guirong

AU - Shi, Jingshi

PY - 2003

Y1 - 2003

N2 - Pentacene organic field-effect transistors (OFETs) were fabricated and investigated with thermal oxide and a self-assembled SiO2 (SA-SiO2) nanoparticle thin-film as the gate dielectrics. SA-SiO 2 film functions well as a gate dielectric with a breakdown field larger than 0.57 MV/cm and leakage current less than 2 nA/mm2 with an applied voltage of 20 V. Being a low-cost and low-temperature process, self-assembly is extremely suitable for OFET fabrication. Dual-gate pentacene FETs containing SA-SiO2 thin-film was presented as a new structure with good performance.

AB - Pentacene organic field-effect transistors (OFETs) were fabricated and investigated with thermal oxide and a self-assembled SiO2 (SA-SiO2) nanoparticle thin-film as the gate dielectrics. SA-SiO 2 film functions well as a gate dielectric with a breakdown field larger than 0.57 MV/cm and leakage current less than 2 nA/mm2 with an applied voltage of 20 V. Being a low-cost and low-temperature process, self-assembly is extremely suitable for OFET fabrication. Dual-gate pentacene FETs containing SA-SiO2 thin-film was presented as a new structure with good performance.

KW - Dual-gate

KW - Organic field-effect transistor

KW - Pentacene

KW - Self-assembly

KW - SiO nanoparticle

UR - https://www.scopus.com/pages/publications/0842266660

UR - https://www.scopus.com/pages/publications/0842266660#tab=citedBy

M3 - Conference article

AN - SCOPUS:0842266660

SN - 0163-1918

SP - 207

EP - 210

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Fabrication of Pentacene Organic Field-Effect Transistors Containing SiO₂ Nanoparticle Thin Film as the Gate Dielectric

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Keywords

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