Fabrication of Pentacene Organic Field-Effect Transistors Containing SiO2 Nanoparticle Thin Film as the Gate Dielectric

Tianhong Cui, Guirong Liang, Jingshi Shi

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Pentacene organic field-effect transistors (OFETs) were fabricated and investigated with thermal oxide and a self-assembled SiO2 (SA-SiO2) nanoparticle thin-film as the gate dielectrics. SA-SiO 2 film functions well as a gate dielectric with a breakdown field larger than 0.57 MV/cm and leakage current less than 2 nA/mm2 with an applied voltage of 20 V. Being a low-cost and low-temperature process, self-assembly is extremely suitable for OFET fabrication. Dual-gate pentacene FETs containing SA-SiO2 thin-film was presented as a new structure with good performance.

Original languageEnglish (US)
Pages (from-to)207-210
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: Dec 8 2003Dec 10 2003

Keywords

  • Dual-gate
  • Organic field-effect transistor
  • Pentacene
  • Self-assembly
  • SiO nanoparticle

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