Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes

Chia Feng Lin, Yi Hui Tseng, Wen Che Lee, Wei Ju Hsu, Yen Lun Chen, Sung Hyun Park, Jung Han

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

InGaN-based light-emitting diodes (LED) with an embedded air-gap disk structure were fabricated using a laser drilling process and an electrochemical (EC) wet etching process. The disk-shaped air-gap structure was formed surrounding the laser-drilled hole as a reflective structure to enhance the light extraction efficiency. The light output power of the treated LED structure was enhanced by 22% compared with a conventional LED at 20 mA. High light emission intensity of the treated LED structure was observed at the 40-μm-diameter embedded air-disk patterns in the mesa region. The InGaN LED structures with the laser-drilling holes and embedded air-disks can reduce the light trapping effect and increase the light extraction efficiency in the device's central mesa region.

Original languageEnglish (US)
Article number076501
JournalApplied Physics Express
Volume7
Issue number7
DOIs
StatePublished - Jul 2014

Fingerprint Dive into the research topics of 'Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes'. Together they form a unique fingerprint.

Cite this