Abstract
Layer-by-layer self-assembled thin films made of indium nanoparticles have been investigated as conductive materials to fabricate resistors. The functional resistors degrade as the current passes through the devices. However, it tends to be stable at some acceptable values. The rapid thermal annealing has a significant effect on the electrical characteristics of this thin film. The resistivity before annealing was 2.4×105 Ωcm, and it was reduced dramatically after annealing to about 0.9 Ωcm.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2085-2088 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 47 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 1 2003 |
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Keywords
- Indium
- Layer-by-layer self-assembly
- Resistivity
- Resistor
Cite this
Fabrication of indium resistors by layer-by-layer nanoassembly and microlithography techniques. / Shi, Jingshi; Cui, Tianhong.
In: Solid-State Electronics, Vol. 47, No. 11, 01.11.2003, p. 2085-2088.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of indium resistors by layer-by-layer nanoassembly and microlithography techniques
AU - Shi, Jingshi
AU - Cui, Tianhong
PY - 2003/11/1
Y1 - 2003/11/1
N2 - Layer-by-layer self-assembled thin films made of indium nanoparticles have been investigated as conductive materials to fabricate resistors. The functional resistors degrade as the current passes through the devices. However, it tends to be stable at some acceptable values. The rapid thermal annealing has a significant effect on the electrical characteristics of this thin film. The resistivity before annealing was 2.4×105 Ωcm, and it was reduced dramatically after annealing to about 0.9 Ωcm.
AB - Layer-by-layer self-assembled thin films made of indium nanoparticles have been investigated as conductive materials to fabricate resistors. The functional resistors degrade as the current passes through the devices. However, it tends to be stable at some acceptable values. The rapid thermal annealing has a significant effect on the electrical characteristics of this thin film. The resistivity before annealing was 2.4×105 Ωcm, and it was reduced dramatically after annealing to about 0.9 Ωcm.
KW - Indium
KW - Layer-by-layer self-assembly
KW - Resistivity
KW - Resistor
UR - http://www.scopus.com/inward/record.url?scp=0042730087&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0042730087&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(03)00262-4
DO - 10.1016/S0038-1101(03)00262-4
M3 - Article
VL - 47
SP - 2085
EP - 2088
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 11
ER -