In this study, we report Cu2ZnSn(S,Se)4 (CZTSSe) thin films synthesized by using a rapid thermal annealing process of direct current sputtered precursors under a sulfur and selenium atmosphere. X-ray diffraction and Raman spectroscopy investigations showed formation of CZTSSe absorber layer without any secondary phase. X-ray fluorescence spectroscopy showed a stoichiometric absorber layer has been formed which is suitable for use in solar cells. The best thin film solar cell of CZTSSe showed a photovoltaic performance of 5.2% efficiency (Voc: 585.0 mV, Jsc: 17.0 mA/cm2 and FF: 52.0%). This is the highest efficiency reported for CZTSSe prepared from sputtered Cu/Zn/Sn precursors followed by sulfo-selenization using powder sources.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - Jun 1 2015|
- CZTS thin films
- Solar cells