Polymer materials are attracting more and more attention for the applications to microelectronic/optoelectronic devices due to their flexibility, lightweight, low cost, etc. In this paper, fabrication and characterization of a polymer junction field-effect transistor (JFET), using poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDT/PSS) as the channel and poly (2,5-hexyloxy p-phenylene cyanovinylene) (CNPPV) as the gate layer, are reported. The all-polymer JFET was fabricated by the conventional ultraviolet (UV) lithography techniques. The fabricated device was measured and characterized electrically. In the meantime, the comparisons were listed between polymer JFET and analogous inorganic semiconductor counterparts. Its pinch-off voltage reaches 1 V that is in the applicable range, and the current is -13.8 μA at zero gate bias. It demonstrates that the device operates in a very similar fashion to its conventional counterparts.
Bibliographical noteFunding Information:
Manuscript received June 20, 2003; revised November 24, 2003. This work was supported in part by DARPA under Grant DAAD19-02-1-0338, and by Louisiana Technical University, Ruston, under a CEnIT seed grant. The review of this paper was arranged by Editor S. Datta.
- Junction field-effect transistor (JFET)
- Polymer microelectronics