TY - JOUR
T1 - Fabrication and characterization of GaN/AlGaN ultraviolet-band heterojunction photodiodes
AU - Krishnankutty, Subash
AU - Yang, Wei
AU - Nohava, Thomas
AU - Ruden, P. Paul
PY - 1998
Y1 - 1998
N2 - Results from MOCVD grown n-Al0.1Ga0.9N/i-GaN/p-GaN UV photodetectors on sapphire substrates are presented. The devices show peak responsivities near 0.2A/W for wavelengths between 352nm and 362nm, and responsivities of less than 10-3A/W for wavelengths longer than 375nm and shorter than 342nm. The data is explained in terms of a simple device model.
AB - Results from MOCVD grown n-Al0.1Ga0.9N/i-GaN/p-GaN UV photodetectors on sapphire substrates are presented. The devices show peak responsivities near 0.2A/W for wavelengths between 352nm and 362nm, and responsivities of less than 10-3A/W for wavelengths longer than 375nm and shorter than 342nm. The data is explained in terms of a simple device model.
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U2 - 10.1557/S109257830000079X
DO - 10.1557/S109257830000079X
M3 - Article
AN - SCOPUS:0005914258
SN - 1092-5783
VL - 3
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
ER -