Fabricating rad-hard SIMOX SRAMs

Michael Guerra, Andrew Wittkower, Jeff Stahman, Jay W Schrankler

Research output: Contribution to journalArticle

Abstract

Silicon-on-insulator (SOI) technology is maturing at a rapid pace. This is particularly true of SIMOX (Separation by IMplantation of Oxygen), the most advanced of the SOI materials. The many circuits that have been produced in SIMOX offer a host of advantages over devices built in bulk silicon. This article focuses on the recent successful fabrication of radiation hardened static RAMs. These SIMOX SRAMs, which range in complexity from 16K to 64K, exhibit excellent characteristics when tested over a wide range of supply voltages, temperatures and radiation conditions.

Original languageEnglish (US)
Pages (from-to)176-179
Number of pages4
JournalSemiconductor International
Volume13
Issue number6
StatePublished - May 1 1990

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    Guerra, M., Wittkower, A., Stahman, J., & Schrankler, J. W. (1990). Fabricating rad-hard SIMOX SRAMs. Semiconductor International, 13(6), 176-179.