Extrinsic performance limitations of AlGaN/GaN heterostructure field effect TRANSISTORS

P. P. Ruden; J. D. Albrecht; A. Sutandi; S. C. Binari; K. Ikossi-Anastasiou; M. G. Ancona; R. L. Henry; D. D. Koleske; A. E. Wickenden

doi:10.1557/s1092578300003240

Extrinsic performance limitations of AlGaN/GaN heterostructure field effect TRANSISTORS

P. P. Ruden, J. D. Albrecht, A. Sutandi, S. C. Binari, K. Ikossi-Anastasiou, M. G. Ancona, R. L. Henry, D. D. Koleske, A. E. Wickenden

Electrical and Computer Engineering

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Abstract

Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1μm gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/ GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.

Original language	English (US)
Pages (from-to)	6d
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	4
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300003240
State	Published - 1999

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title = "Extrinsic performance limitations of AlGaN/GaN heterostructure field effect TRANSISTORS",

abstract = "Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1μm gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/ GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.",

author = "Ruden, {P. P.} and Albrecht, {J. D.} and A. Sutandi and Binari, {S. C.} and K. Ikossi-Anastasiou and Ancona, {M. G.} and Henry, {R. L.} and Koleske, {D. D.} and Wickenden, {A. E.}",

year = "1999",

doi = "10.1557/s1092578300003240",

language = "English (US)",

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TY - JOUR

T1 - Extrinsic performance limitations of AlGaN/GaN heterostructure field effect TRANSISTORS

AU - Ruden, P. P.

AU - Albrecht, J. D.

AU - Sutandi, A.

AU - Binari, S. C.

AU - Ikossi-Anastasiou, K.

AU - Ancona, M. G.

AU - Henry, R. L.

AU - Koleske, D. D.

AU - Wickenden, A. E.

PY - 1999

Y1 - 1999

N2 - Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1μm gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/ GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.

AB - Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1μm gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/ GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.

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M3 - Article

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ER -

Extrinsic performance limitations of AlGaN/GaN heterostructure field effect TRANSISTORS

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