Extrinsic performance limitations of AIGaN/GaN heterostructure field effect transistors

Engineering

• Heterostructures 100%
• Field-Effect Transistor 100%
• Limitations 100%
• Sapphire Substrate 100%
• Gate Length 100%
• Model Prediction 100%
• Series Resistance 100%
• Parasitic Resistance 100%
• Performance Prediction 100%
• Analytical Model 100%
• Heterojunctions 100%
• Thermal Effect 100%

Keyphrases

• Performance Limitation 100%
• GaN Heterostructure 100%
• Heterostructure Field-effect Transistors 100%
• Model Prediction 50%
• Thermal Effect 50%
• Series Resistance 50%
• Performance Prediction 50%
• Wafer 50%
• Gate Length 50%
• Output Characteristics 50%
• Sapphire Substrate 50%
• Analytical Model 50%
• Heat Sink 50%
• AlGaN-GaN 50%
• Extrinsic Effects 50%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• DC Output 50%
• GaN HFET 50%
• Parasitic Resistance Effects 50%
• Characterization Experiments 50%