Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with lum gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AIGaN/ GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.
|Original language||English (US)|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Dec 1 1999|