EXTRINSIC EFFECTS IN REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION PATTERNS FROM MBE GaAs.

P. R. Pukite, J. M. Van Hove, Philip I Cohen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

27 Scopus citations

Abstract

One uncontrolled parameter of MBE growth on GaAs is the orientation of the substrate. Typical material is oriented to within one-half degree of a low-index bulk plane so that the resulting surface consists of a staircase with random terrace lengths and step heights. These steps are important since at room temperature they can orient epitaxial layers and a high temperatures the terrace lengths can be comparable to diffusion distances. Ordered step arrays can also be an important factor in the formation of the characteristic streaked RHEED pattern. The authors have measured the profiles of these streaks from different wafers with nominally GaAs(001) surfaces and have observed striking differences which they ascribe to ordered staircase steps due to crystal misorientation. Misorientations as small as 1 mrad have been found. Surfaces in which the misorientation from the (001) was about 6. 5 mrad were studied extensively and a reciprocal lattice was constructed from a map of the diffracted intensity vs scattering angles. On surfaces misoriented by 1 degree , RHEED oscillations were found to be much weaker than on the 6. 5 mrad surface.

Original languageEnglish (US)
Title of host publicationJournal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Pages243-248
Number of pages6
Volume2
Edition2
DOIs
StatePublished - Apr 1 1983
EventProc of the 5th Mol Beam Epitaxy Workshop - Atlanta, GA, USA
Duration: Oct 6 1983Oct 7 1983

Other

OtherProc of the 5th Mol Beam Epitaxy Workshop
CityAtlanta, GA, USA
Period10/6/8310/7/83

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    Pukite, P. R., Van Hove, J. M., & Cohen, P. I. (1983). EXTRINSIC EFFECTS IN REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION PATTERNS FROM MBE GaAs. In Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena (2 ed., Vol. 2, pp. 243-248) https://doi.org/10.1116/1.582795