Extraction of two-port S-parameters for an electro-optical device

A. Ghiasi, A. Gopinath

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor diode lasers are well suited for high speed lightwave communication systems due to their large intrinsic relaxation frequency. Diode lasers have been demonstrated with modulation frequency in excess of 20 GHz. As the laser modulation frequency extends in the microwave frequencies, device structure and the package may severely limit the response [1]. Therefore, at these rates an understanding of the device and package parasitic is essential. This will aid in de-coupling the laser's electrical response from the cascaded electro-optical measurement.

Original languageEnglish (US)
Title of host publicationElectrical Performance of Electronic Packaging, EPEP 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages37-40
Number of pages4
ISBN (Electronic)078030683X, 9780780306837
DOIs
StatePublished - Jan 1 1992
Event1992 Electrical Performance of Electronic Packaging, EPEP 1992 - Tucson, United States
Duration: Apr 22 1992Apr 24 1992

Publication series

NameElectrical Performance of Electronic Packaging, EPEP 1992

Conference

Conference1992 Electrical Performance of Electronic Packaging, EPEP 1992
CountryUnited States
CityTucson
Period4/22/924/24/92

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