Extraction of two-port S-parameters for an electro-optical device

A. Ghiasi; A. Gopinath

doi:10.1109/EPEP.1992.572259

Extraction of two-port S-parameters for an electro-optical device

A. Ghiasi, A. Gopinath

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Semiconductor diode lasers are well suited for high speed lightwave communication systems due to their large intrinsic relaxation frequency. Diode lasers have been demonstrated with modulation frequency in excess of 20 GHz. As the laser modulation frequency extends in the microwave frequencies, device structure and the package may severely limit the response [1]. Therefore, at these rates an understanding of the device and package parasitic is essential. This will aid in de-coupling the laser's electrical response from the cascaded electro-optical measurement.

Original language	English (US)
Title of host publication	Electrical Performance of Electronic Packaging, EPEP 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	37-40
Number of pages	4
ISBN (Electronic)	078030683X, 9780780306837
DOIs	https://doi.org/10.1109/EPEP.1992.572259
State	Published - 1992
Event	1992 Electrical Performance of Electronic Packaging, EPEP 1992 - Tucson, United States Duration: Apr 22 1992 → Apr 24 1992

Publication series

Name	Electrical Performance of Electronic Packaging, EPEP 1992

Conference

Conference	1992 Electrical Performance of Electronic Packaging, EPEP 1992
Country/Territory	United States
City	Tucson
Period	4/22/92 → 4/24/92

Bibliographical note

Publisher Copyright:
© 1992 IEEE.

Publisher link

10.1109/EPEP.1992.572259

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Extraction of two-port S-parameters for an electro-optical device. / Ghiasi, A.; Gopinath, A.
Electrical Performance of Electronic Packaging, EPEP 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 37-40 572259 (Electrical Performance of Electronic Packaging, EPEP 1992).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ghiasi, A & Gopinath, A 1992, Extraction of two-port S-parameters for an electro-optical device. in Electrical Performance of Electronic Packaging, EPEP 1992., 572259, Electrical Performance of Electronic Packaging, EPEP 1992, Institute of Electrical and Electronics Engineers Inc., pp. 37-40, 1992 Electrical Performance of Electronic Packaging, EPEP 1992, Tucson, United States, 4/22/92. https://doi.org/10.1109/EPEP.1992.572259

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abstract = "Semiconductor diode lasers are well suited for high speed lightwave communication systems due to their large intrinsic relaxation frequency. Diode lasers have been demonstrated with modulation frequency in excess of 20 GHz. As the laser modulation frequency extends in the microwave frequencies, device structure and the package may severely limit the response [1]. Therefore, at these rates an understanding of the device and package parasitic is essential. This will aid in de-coupling the laser's electrical response from the cascaded electro-optical measurement.",

author = "A. Ghiasi and A. Gopinath",

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AB - Semiconductor diode lasers are well suited for high speed lightwave communication systems due to their large intrinsic relaxation frequency. Diode lasers have been demonstrated with modulation frequency in excess of 20 GHz. As the laser modulation frequency extends in the microwave frequencies, device structure and the package may severely limit the response [1]. Therefore, at these rates an understanding of the device and package parasitic is essential. This will aid in de-coupling the laser's electrical response from the cascaded electro-optical measurement.

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Extraction of two-port S-parameters for an electro-optical device

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