TY - JOUR
T1 - Expression of concern: Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001
T2 - Expression of concern: Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001 (Properties of Mg doped GaAs grown by molecular beam epitaxy (2001) 226(1) (52–56), (S0022024801013641), (10.1016/S0022-0248(01)01364-1))
AU - Derby, Jeffrey J.
N1 - Publisher Copyright:
© 2021
PY - 2021/4/15
Y1 - 2021/4/15
N2 - Concern has been raised about the publication of this article as we found similarities of this paper in the paper: Growth of high quality Mg-doped GaAs by molecular beam epitaxy and its properties, Jong Su Kim, D.Y. Lee and I.H. Bae, J.I. Lee, S.K. Noh, Jin Soo Kim, Gu Hyun Kim, Seungil Ban, Se-Kyung Kang, S.M. Kim, J.Y. Leem, Minhyon Jeon and J.S. Son, Journal of the Korean Physical Society 39, S518–S521 December 2001, https://doi.org/10.3938/jkps.39.S518. The simultaneous submission or duplicate publication of a manuscript, and the lack of consistent authorship attribution are considered serious breaches of scientific ethics.
AB - Concern has been raised about the publication of this article as we found similarities of this paper in the paper: Growth of high quality Mg-doped GaAs by molecular beam epitaxy and its properties, Jong Su Kim, D.Y. Lee and I.H. Bae, J.I. Lee, S.K. Noh, Jin Soo Kim, Gu Hyun Kim, Seungil Ban, Se-Kyung Kang, S.M. Kim, J.Y. Leem, Minhyon Jeon and J.S. Son, Journal of the Korean Physical Society 39, S518–S521 December 2001, https://doi.org/10.3938/jkps.39.S518. The simultaneous submission or duplicate publication of a manuscript, and the lack of consistent authorship attribution are considered serious breaches of scientific ethics.
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U2 - 10.1016/j.jcrysgro.2021.126038
DO - 10.1016/j.jcrysgro.2021.126038
M3 - Comment/debate
AN - SCOPUS:85101393428
SN - 0022-0248
VL - 560-561
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 126038
ER -