Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains

Roberto Grassi; Antonio Gnudi; Valerio Di Lecce; Elena Gnani; Susanna Reggiani; Giorgio Baccarani

doi:10.1109/TED.2013.2294113

Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains

Roberto Grassi
, Antonio Gnudi
, Valerio Di Lecce
, Elena Gnani
, Susanna Reggiani
, Giorgio Baccarani

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.

Original language	English (US)
Article number	6689297
Pages (from-to)	617-624
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	2
DOIs	https://doi.org/10.1109/TED.2013.2294113
State	Published - Feb 2014

Keywords

Negative differential resistance (NDR)
Terahertz operation
Terms-Graphene field-effect transistor (GFET)
voltage amplifier

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10.1109/TED.2013.2294113

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abstract = "Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.",

keywords = "Negative differential resistance (NDR), Terahertz operation, Terms-Graphene field-effect transistor (GFET), voltage amplifier",

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AU - Grassi, Roberto

AU - Gnudi, Antonio

AU - Lecce, Valerio Di

AU - Gnani, Elena

AU - Reggiani, Susanna

AU - Baccarani, Giorgio

PY - 2014/2

Y1 - 2014/2

N2 - Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.

AB - Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.

KW - Negative differential resistance (NDR)

KW - Terahertz operation

KW - Terms-Graphene field-effect transistor (GFET)

KW - voltage amplifier

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UR - https://www.scopus.com/pages/publications/84893433995#tab=citedBy

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ER -

Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains

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Keywords

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