Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains

Roberto Grassi, Antonio Gnudi, Valerio Di Lecce, Elena Gnani, Susanna Reggiani, Giorgio Baccarani

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.

Original languageEnglish (US)
Article number6689297
Pages (from-to)617-624
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume61
Issue number2
DOIs
StatePublished - Feb 2014

Keywords

  • Negative differential resistance (NDR)
  • Terahertz operation
  • Terms-Graphene field-effect transistor (GFET)
  • voltage amplifier

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