In the study, thermally induced interactions between materials in complex microactuator structures were investigated. The device structure contained a combination of a piezoelectric layer (lead zirconate titanate-PZT) an electrode with adhesion layer (Pt/Ti), buffer layer (SiO2 or TiO2), structural material (polysilicon and/or silicon nitride), and sacrificial oxide (SiO2). XRD results showed significant platinum and titanium silicide formation in the Pt/Ti electrode at 700°C (PZT crystallization temperature) on both polysilicon and silicon nitride structural materials when no buffer layer was used. Auger analysis shows that Ti adhesion layer oxidizes, that measured levels of silicon increase in the electrode zone, and that electrode elements diffuse into the structural material.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 1995|
|Event||Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA|
Duration: Nov 28 1994 → Nov 30 1994