Abstract
600 mV magneto-electric switching in 30 nm La-doped BiFeO3 multiferroic oxide and a proof of concept 7 μV spin-orbit signal output in Pt / CoFe local spin injection device with 100 μA supply current were experimentally demonstrated at room temperature for the 1st time. Also demonstrated was a path towards 70 mV spin orbit output using Bi2Se3 in a local spin injection device. These are key accomplishments for WRITE and READ building blocks, respectively, toward realization of a magneto-electric spin-orbit (MESO) energy-efficient logic device. Moreover, the 1st generation of a MESO logic device with a functional READ unit is demonstrated.
Original language | English (US) |
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Title of host publication | 2019 IEEE International Electron Devices Meeting, IEDM 2019 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781728140315 |
DOIs | |
State | Published - Dec 2019 |
Event | 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: Dec 7 2019 → Dec 11 2019 |
Publication series
Name | Technical Digest - International Electron Devices Meeting, IEDM |
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Volume | 2019-December |
ISSN (Print) | 0163-1918 |
Conference
Conference | 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 |
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Country/Territory | United States |
City | San Francisco |
Period | 12/7/19 → 12/11/19 |
Bibliographical note
Funding Information:ACKNOWLEDGMENT The authors acknowledge the support from Intel University Research Office, SRC STARnet program C-SPIN center and gratefully acknowledge the support from R. Kim, S. Manipatruni, W. Benson, A. Hsiao, M. Christenson, & B. Krist.
Publisher Copyright:
© 2019 IEEE.