Experimental and theoretical investigation of MEH-ppv based Schottky diodes

Mo Zhu, Tianhong Cui, Kody Varahramyan

Research output: Contribution to journalArticlepeer-review

51 Scopus citations


MEH-PPV (poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenylene vinylene]) based Schottky diodes have been fabricated and investigated through the analyses of current density-voltage and capacitance-voltage characteristics. Temperature-dependent hole mobility of MEH-PPV is extracted by the space-charge limited conduction (SCLC) model from 300 to 400 K, and the use of the SCLC model is examined in high electric field. The highest measured hole mobility is 0.013 cm 2/Vs at 353 K. The thickness of MEH-PPV in the structures consisting of ITO/MEH-PPV/Al, largely affects the performance of the diodes, and the thinner film displays better device performance. According to capacitance-voltage relations, the effective carrier density and Schottky barrier height of MEH-PPV have been determined to be 2.24×1017 cm-3 and 0.64 eV, respectively.

Original languageEnglish (US)
Pages (from-to)269-274
Number of pages6
JournalMicroelectronic Engineering
Issue number3
StatePublished - Sep 2004

Bibliographical note

Funding Information:
The authors acknowledge the laboratory and technical resources provided by the Institute for Micromanufacturing for the realization of this work. They thank Mr. D. Tatum for technical support, and Drs. G. Liang and J. Wang for helpful discussions. This work was supported in part by a DARPA grant.

Copyright 2009 Elsevier B.V., All rights reserved.


  • Mobility
  • Polymer Schottky diodes
  • SCLC

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