Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals

S. V. Bykova, V. D. Golyshev, M. A. Gonik, V. B. Tsvetovsky, V. I. Deshko, A. Ya Karvatskii, A. V. Lenkin, S. Brandon, O. Weinstein, A. Virozub, J. J. Derby, A. Yeckel, P. Sonda

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

Combined experimental and numerical tools are used to analyze the effect of convective and radiative heat transport, faceting phenomena, and the optical thickness of the Bi4Ge3O12 (BGO) crystal on the measurement and calculation of melt/crystal interface kinetics during the axial heat flux close to the phase interface growth of BGO single crystals. Results show that, in the general case, accurate determination of growth kinetic relations requires the application of models which account for all of the above phenomena (radiative and convective heat transport, faceting phenomena, etc.). Failure to take these into account may result not only in quantitative errors, but also even in qualitatively wrong determination of interfacial kinetic mechanisms.

Original languageEnglish (US)
Pages (from-to)246-256
Number of pages11
JournalJournal of Crystal Growth
Volume266
Issue number1-3
DOIs
StatePublished - May 15 2004
EventProceedings of the Fourth International Workshop on Modeling - Kyushu, Japan
Duration: Nov 4 2003Nov 7 2003

Keywords

  • A1. Interfaces
  • A2. Growth from melt
  • B1. Bismuth germanate

Fingerprint Dive into the research topics of 'Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals'. Together they form a unique fingerprint.

Cite this