Abstract
The dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon on exposure time, light intensity, exposure temperature and boron-doping concentration is investigated. Our results indicate that the excess- conductivity effect arises from charge storage in a novel defect centre. The growth of the excess conductivity is thermally activated and obeys a power-law dependence on exposure time and light intensity, where the exposure-time exponent increases with light intensity.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 199-218 |
| Number of pages | 20 |
| Journal | Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties |
| Volume | 54 |
| Issue number | 3 |
| DOIs | |
| State | Published - Sep 1986 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
-
SDG 7 Affordable and Clean Energy
Fingerprint
Dive into the research topics of 'Excitation and temperature dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS