Excitation and temperature dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon

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Abstract

The dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon on exposure time, light intensity, exposure temperature and boron-doping concentration is investigated. Our results indicate that the excess- conductivity effect arises from charge storage in a novel defect centre. The growth of the excess conductivity is thermally activated and obeys a power-law dependence on exposure time and light intensity, where the exposure-time exponent increases with light intensity.

Original languageEnglish (US)
Pages (from-to)199-218
Number of pages20
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume54
Issue number3
DOIs
StatePublished - Sep 1986

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