TY - JOUR
T1 - Excitation and temperature dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon
AU - Kakalios, James
PY - 1986/9
Y1 - 1986/9
N2 - The dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon on exposure time, light intensity, exposure temperature and boron-doping concentration is investigated. Our results indicate that the excess- conductivity effect arises from charge storage in a novel defect centre. The growth of the excess conductivity is thermally activated and obeys a power-law dependence on exposure time and light intensity, where the exposure-time exponent increases with light intensity.
AB - The dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon on exposure time, light intensity, exposure temperature and boron-doping concentration is investigated. Our results indicate that the excess- conductivity effect arises from charge storage in a novel defect centre. The growth of the excess conductivity is thermally activated and obeys a power-law dependence on exposure time and light intensity, where the exposure-time exponent increases with light intensity.
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U2 - 10.1080/13642818608239020
DO - 10.1080/13642818608239020
M3 - Article
AN - SCOPUS:84915870818
SN - 1364-2812
VL - 54
SP - 199
EP - 218
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
IS - 3
ER -