Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures

Gregory Blachut; Stephen M. Sirard; Andrew Liang; Chris A. Mack; Michael J. Maher; Paulina A. Rincon-Delgadillo; Boon Teik Chan; Geert Mannaert; Geert Vandenberghe; C. Grant Willson; Christopher J. Ellison; Diane Hymes

doi:10.1117/12.2297489

Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures

Gregory Blachut, Stephen M. Sirard, Andrew Liang, Chris A. Mack, Michael J. Maher, Paulina A. Rincon-Delgadillo, Boon Teik Chan, Geert Mannaert, Geert Vandenberghe, C. Grant Willson, Christopher J. Ellison, Diane Hymes

Chemical Engineering and Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.

Original language	English (US)
Title of host publication	Advanced Etch Technology for Nanopatterning VII
Editors	Sebastian U. Engelmann, Richard S. Wise
Publisher	SPIE
ISBN (Electronic)	9781510616707
DOIs	https://doi.org/10.1117/12.2297489
State	Published - 2018
Event	Advanced Etch Technology for Nanopatterning VII 2018 - San Jose, United States Duration: Feb 26 2018 → Feb 28 2018

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10589
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Advanced Etch Technology for Nanopatterning VII 2018
Country/Territory	United States
City	San Jose
Period	2/26/18 → 2/28/18

Bibliographical note

Publisher Copyright:
© 2018 SPIE.

Keywords

Block copolymers
Directed self-assembly
High-chi
Pattern transfer
Roughness
Silicon-containing

Publisher link

10.1117/12.2297489

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Blachut, G., Sirard, S. M., Liang, A., Mack, C. A., Maher, M. J., Rincon-Delgadillo, P. A., Chan, B. T., Mannaert, G., Vandenberghe, G., Willson, C. G., Ellison, C. J., & Hymes, D. (2018). Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. In S. U. Engelmann, & R. S. Wise (Eds.), Advanced Etch Technology for Nanopatterning VII Article 1058907 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10589). SPIE. https://doi.org/10.1117/12.2297489

Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. / Blachut, Gregory; Sirard, Stephen M.; Liang, Andrew et al.
Advanced Etch Technology for Nanopatterning VII. ed. / Sebastian U. Engelmann; Richard S. Wise. SPIE, 2018. 1058907 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10589).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Blachut, G, Sirard, SM, Liang, A, Mack, CA, Maher, MJ, Rincon-Delgadillo, PA, Chan, BT, Mannaert, G, Vandenberghe, G, Willson, CG, Ellison, CJ & Hymes, D 2018, Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. in SU Engelmann & RS Wise (eds), Advanced Etch Technology for Nanopatterning VII., 1058907, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10589, SPIE, Advanced Etch Technology for Nanopatterning VII 2018, San Jose, United States, 2/26/18. https://doi.org/10.1117/12.2297489

Blachut G, Sirard SM, Liang A, Mack CA, Maher MJ, Rincon-Delgadillo PA et al. Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. In Engelmann SU, Wise RS, editors, Advanced Etch Technology for Nanopatterning VII. SPIE. 2018. 1058907. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2297489

Blachut, Gregory ; Sirard, Stephen M. ; Liang, Andrew et al. / Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. Advanced Etch Technology for Nanopatterning VII. editor / Sebastian U. Engelmann ; Richard S. Wise. SPIE, 2018. (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.",

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AU - Mack, Chris A.

AU - Maher, Michael J.

AU - Rincon-Delgadillo, Paulina A.

AU - Chan, Boon Teik

AU - Mannaert, Geert

AU - Vandenberghe, Geert

AU - Willson, C. Grant

AU - Ellison, Christopher J.

AU - Hymes, Diane

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N2 - A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.

AB - A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.

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KW - Pattern transfer

KW - Roughness

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ER -

Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures

Abstract

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