Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures

Gregory Blachut, Stephen M. Sirard, Andrew Liang, Chris A. Mack, Michael J. Maher, Paulina A. Rincon-Delgadillo, Boon Teik Chan, Geert Mannaert, Geert Vandenberghe, C. Grant Willson, Christopher J Ellison, Diane Hymes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.

Original languageEnglish (US)
Title of host publicationAdvanced Etch Technology for Nanopatterning VII
EditorsSebastian U. Engelmann, Richard S. Wise
PublisherSPIE
Volume10589
ISBN (Electronic)9781510616707
DOIs
StatePublished - Jan 1 2018
EventAdvanced Etch Technology for Nanopatterning VII 2018 - San Jose, United States
Duration: Feb 26 2018Feb 28 2018

Other

OtherAdvanced Etch Technology for Nanopatterning VII 2018
CountryUnited States
CitySan Jose
Period2/26/182/28/18

Fingerprint

Block Copolymers
Silicon
block copolymers
Roughness
Block copolymers
roughness
Surface roughness
silicon
Self assembly
Self-assembly
self assembly
Roughness measurement
Silicon Nitride
Silicon nitride
walking
Line
Inhomogeneity
silicon nitrides
Ions
Monitor

Keywords

  • Block copolymers
  • Directed self-assembly
  • High-chi
  • Pattern transfer
  • Roughness
  • Silicon-containing

Cite this

Blachut, G., Sirard, S. M., Liang, A., Mack, C. A., Maher, M. J., Rincon-Delgadillo, P. A., ... Hymes, D. (2018). Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. In S. U. Engelmann, & R. S. Wise (Eds.), Advanced Etch Technology for Nanopatterning VII (Vol. 10589). [1058907] SPIE. https://doi.org/10.1117/12.2297489

Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. / Blachut, Gregory; Sirard, Stephen M.; Liang, Andrew; Mack, Chris A.; Maher, Michael J.; Rincon-Delgadillo, Paulina A.; Chan, Boon Teik; Mannaert, Geert; Vandenberghe, Geert; Willson, C. Grant; Ellison, Christopher J; Hymes, Diane.

Advanced Etch Technology for Nanopatterning VII. ed. / Sebastian U. Engelmann; Richard S. Wise. Vol. 10589 SPIE, 2018. 1058907.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Blachut, G, Sirard, SM, Liang, A, Mack, CA, Maher, MJ, Rincon-Delgadillo, PA, Chan, BT, Mannaert, G, Vandenberghe, G, Willson, CG, Ellison, CJ & Hymes, D 2018, Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. in SU Engelmann & RS Wise (eds), Advanced Etch Technology for Nanopatterning VII. vol. 10589, 1058907, SPIE, Advanced Etch Technology for Nanopatterning VII 2018, San Jose, United States, 2/26/18. https://doi.org/10.1117/12.2297489
Blachut G, Sirard SM, Liang A, Mack CA, Maher MJ, Rincon-Delgadillo PA et al. Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. In Engelmann SU, Wise RS, editors, Advanced Etch Technology for Nanopatterning VII. Vol. 10589. SPIE. 2018. 1058907 https://doi.org/10.1117/12.2297489
Blachut, Gregory ; Sirard, Stephen M. ; Liang, Andrew ; Mack, Chris A. ; Maher, Michael J. ; Rincon-Delgadillo, Paulina A. ; Chan, Boon Teik ; Mannaert, Geert ; Vandenberghe, Geert ; Willson, C. Grant ; Ellison, Christopher J ; Hymes, Diane. / Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures. Advanced Etch Technology for Nanopatterning VII. editor / Sebastian U. Engelmann ; Richard S. Wise. Vol. 10589 SPIE, 2018.
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