Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers

S. J. Koester, E. W. Kiewra, Vanning Sun, D. A. Neumayer, J. A. Ott, M. Copel, D. K. Sadana, D. J. Webb, J. Fompeyrine, J. P. Locquet, C. Marchiori, M. Sousa, R. Germann

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Abstract

Evidence of inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers is reported. Capacitors formed on n-GaAs with atomic layer-deposited HfO 2 displayed C-V characteristics with minimum D it of 7 × 10 11 cm -2/eV, while capacitors with molecular beam epitaxy-deposited HfO 2 on p-GaAs had D it=3 × 10 12 cm -2/eV. Lateral charge transport was confirmed using illuminated C-V measurements on capacitors fabricated with thick Al electrodes. Under these conditions, capacitors on n-GaAs (p-GaAs) showed "low-frequency" C-V behavior, indicated by a sharp capacitance increase and saturation at negative (positive) gate bias, confirming the presence of mobile charge at the semiconductor/dielectric interface.

Original languageEnglish (US)
Article number042104
JournalApplied Physics Letters
Volume89
Issue number4
DOIs
StatePublished - Aug 4 2006

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    Koester, S. J., Kiewra, E. W., Sun, V., Neumayer, D. A., Ott, J. A., Copel, M., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J. P., Marchiori, C., Sousa, M., & Germann, R. (2006). Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers. Applied Physics Letters, 89(4), [042104]. https://doi.org/10.1063/1.2235862