Using ultrafast time-resolved THz spectroscopy, we observe two-orders-of-magnitude increase in the relaxation rate in semiconducting epitaxial graphene relative to pristine epitaxial graphene, attributed to enhancement of the optical-phonon-mediated carrier cooling and recombination over a wide range of electron temperatures.
|Original language||English (US)|
|Title of host publication||2016 Conference on Lasers and Electro-Optics, CLEO 2016|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Dec 16 2016|
|Event||2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States|
Duration: Jun 5 2016 → Jun 10 2016
|Name||2016 Conference on Lasers and Electro-Optics, CLEO 2016|
|Other||2016 Conference on Lasers and Electro-Optics, CLEO 2016|
|Period||6/5/16 → 6/10/16|
Bibliographical notePublisher Copyright:
© 2016 OSA.