Evaluation of a 900 V SiC MOSFET in a 13.56 MHz 2 kW resonant inverter for wireless power transfer

Jungwon Choi, Daisuke Tsukiyama, Juan Rivas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

This paper demonstrates the performance of a 900 V silicon carbide (SiC) power MOSFET operating at 13.56 MHz in a 2 kW resonant inverter targeted for wireless power transfer (WPT) systems. Operating at multi-MHz switching frequency leads to smaller passive components and has the potential to improve power density and reduce weight for weight-sensitive applications. In addition, the advent of wide band gap (WBG) power semiconductors with higher breakdown voltages than silicon (Si) allows the design of high-power (2 kW or more) inverters even when operating at MHz frequencies. Previous work described the design and implementation of a class Φ2 inverter using an enhancement mode gallium nitride (eGaN) FET at output power of 1.3 kW and switching at 13.56 MHz [1]. While eGaN FETs have promising electrical characteristics for high-frequency operation, SiC MOSFETs are becoming available with higher temperature ratings, higher breakdown voltages and higher avalanche ratings to operate at tens of MHz switching frequency. In this work, we study and evaluate the electrical characteristics of a 900 V, 7L D2PAK SiC MOSFET and demonstrate the design of a 2 kW single-ended resonant inverter operating at 13.56 MHz.

Original languageEnglish (US)
Title of host publication2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509018154
DOIs
StatePublished - Aug 30 2016
Externally publishedYes
Event17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016 - Trondheim, Norway
Duration: Jun 27 2016Jun 30 2016

Publication series

Name2016 IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016

Conference

Conference17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016
CountryNorway
CityTrondheim
Period6/27/166/30/16

Fingerprint Dive into the research topics of 'Evaluation of a 900 V SiC MOSFET in a 13.56 MHz 2 kW resonant inverter for wireless power transfer'. Together they form a unique fingerprint.

Cite this