Etching of high aspect ratio features in Si using SF ₆/O ₂/HBr and SF ₆/O ₂/Cl ₂ plasma

Engineering

• Mixture 100%
• High Aspect Ratio 100%
• Plasma 100%
• Side Wall 66%
• Experiments 33%
• Reduction 33%
• High Density 33%
• Visualization 33%
• Flow Rate 33%
• Reactor 33%
• Low Pressure 33%
• Etch Rate 33%
• Inductively Coupled Plasma 33%
• Passivation 33%
• Plasma Diagnostics 33%

Physics

• Etching 100%
• Aspect Ratio 100%
• Ratios 50%
• Silicon 33%
• Mass Spectroscopy 16%
• Scanning Electron Microscopy 16%
• Low Pressure 16%
• Diameters 16%
• Plasma Etching 16%
• Oxygen 16%
• Flow Velocity 16%
• Optical Emission Spectroscopy 16%
• Gaseous State 16%

Material Science

• Mixture 100%
• Silicon 66%
• Scanning Electron Microscopy 33%
• Density 33%
• Gas 33%
• Film 33%
• Plasma Etching 33%
• Coil 33%