Etching of high aspect ratio features in Si using SF ₆/O ₂/HBr and SF ₆/O ₂/Cl ₂ plasma

Keyphrases

• Cl 2 100%
• High Aspect Ratio Features 100%
• SF 6 100%
• Lateral Etching 100%
• Mass Spectroscopy 50%
• Scanning Electron Microscopy 50%
• High Density 50%
• Halogens 50%
• Sidewall 50%
• Chemical Etching 50%
• Reactor 50%
• Low Pressure 50%
• O2 Flow Rate 50%
• Plasma Diagnostics 50%
• Lack of Oxygen 50%
• Etching Rate 50%
• Planar Coil 50%
• Optical Emission Spectroscopy 50%
• Profile Shape 50%
• Feature Profiles 50%
• High Aspect Ratio Hole 50%
• Mixture Reduction 50%
• Cl2 Gas 50%
• Inductively Coupled Plasma Etching 50%
• Passivating Film 50%
• Undercut Etching 50%
• Sidewall Passivation 50%

Engineering

• Side Wall 100%
• High Aspect Ratio 100%
• Flow Rate 50%
• Etch Rate 50%
• Passivation 50%
• Plasma Diagnostics 50%
• Inductively Coupled Plasma 50%
• Flow Velocity 50%
• Light Emission 50%

Material Science

• Silicon 100%
• Scanning Electron Microscopy 50%
• Density 50%
• Film 50%
• Plasma Etching 50%