Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model

Chen Zhou; Xiaofei Wang; Weichao Xu; Yuhao Zhu; Vijay Janapa Reddi; Chris H. Kim

doi:10.1109/IRPS.2014.6860593

Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model

Chen Zhou, Xiaofei Wang, Weichao Xu, Yuhao Zhu, Vijay Janapa Reddi, Chris H. Kim

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

This work proposes an empirical Bias Temperature Instability (BTI) stress-relaxation model based on the superposition property. The model was used to study the instantaneous frequency fluctuation in a fast Dynamic Voltage and Frequency Scaling (DVFS) environment. V_DD and operating frequency information for this study were collected from an ARM Cortex A15 processor based development board running an Android operating system. Simulation results show that the frequency peaks and dips are functions of mainly two parameters: (1) the amount of stress or recovery experienced by the circuit prior to the V _DD switching and (2) the frequency sensitivity to device aging after the V_DD switching.

Original language	English (US)
Title of host publication	2014 IEEE International Reliability Physics Symposium, IRPS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2D.2.1-2D.2.6
ISBN (Print)	9781479933167
DOIs	https://doi.org/10.1109/IRPS.2014.6860593
State	Published - 2014
Event	52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States Duration: Jun 1 2014 → Jun 5 2014

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	52nd IEEE International Reliability Physics Symposium, IRPS 2014
Country/Territory	United States
City	Waikoloa, HI
Period	6/1/14 → 6/5/14

Keywords

bias temperature instability
dynamic voltage and frequency scaling
frequency degradation
superposition property

Publisher link

10.1109/IRPS.2014.6860593

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Zhou, C., Wang, X., Xu, W., Zhu, Y., Reddi, V. J., & Kim, C. H. (2014). Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014 (pp. 2D.2.1-2D.2.6). Article 6860593 (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6860593

Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model. / Zhou, Chen; Wang, Xiaofei; Xu, Weichao et al.
2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2D.2.1-2D.2.6 6860593 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhou, C, Wang, X, Xu, W, Zhu, Y, Reddi, VJ & Kim, CH 2014, Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model. in 2014 IEEE International Reliability Physics Symposium, IRPS 2014., 6860593, IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 2D.2.1-2D.2.6, 52nd IEEE International Reliability Physics Symposium, IRPS 2014, Waikoloa, HI, United States, 6/1/14. https://doi.org/10.1109/IRPS.2014.6860593

Zhou C, Wang X, Xu W, Zhu Y, Reddi VJ, Kim CH. Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2D.2.1-2D.2.6. 6860593. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2014.6860593

Zhou, Chen ; Wang, Xiaofei ; Xu, Weichao et al. / Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model. 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2D.2.1-2D.2.6 (IEEE International Reliability Physics Symposium Proceedings).

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title = "Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model",

abstract = "This work proposes an empirical Bias Temperature Instability (BTI) stress-relaxation model based on the superposition property. The model was used to study the instantaneous frequency fluctuation in a fast Dynamic Voltage and Frequency Scaling (DVFS) environment. VDD and operating frequency information for this study were collected from an ARM Cortex A15 processor based development board running an Android operating system. Simulation results show that the frequency peaks and dips are functions of mainly two parameters: (1) the amount of stress or recovery experienced by the circuit prior to the V DD switching and (2) the frequency sensitivity to device aging after the VDD switching.",

keywords = "bias temperature instability, dynamic voltage and frequency scaling, frequency degradation, superposition property",

author = "Chen Zhou and Xiaofei Wang and Weichao Xu and Yuhao Zhu and Reddi, {Vijay Janapa} and Kim, {Chris H.}",

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language = "English (US)",

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AU - Reddi, Vijay Janapa

AU - Kim, Chris H.

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AB - This work proposes an empirical Bias Temperature Instability (BTI) stress-relaxation model based on the superposition property. The model was used to study the instantaneous frequency fluctuation in a fast Dynamic Voltage and Frequency Scaling (DVFS) environment. VDD and operating frequency information for this study were collected from an ARM Cortex A15 processor based development board running an Android operating system. Simulation results show that the frequency peaks and dips are functions of mainly two parameters: (1) the amount of stress or recovery experienced by the circuit prior to the V DD switching and (2) the frequency sensitivity to device aging after the VDD switching.

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Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model

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