Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model

Chen Zhou, Xiaofei Wang, Weichao Xu, Yuhao Zhu, Vijay Janapa Reddi, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

This work proposes an empirical Bias Temperature Instability (BTI) stress-relaxation model based on the superposition property. The model was used to study the instantaneous frequency fluctuation in a fast Dynamic Voltage and Frequency Scaling (DVFS) environment. VDD and operating frequency information for this study were collected from an ARM Cortex A15 processor based development board running an Android operating system. Simulation results show that the frequency peaks and dips are functions of mainly two parameters: (1) the amount of stress or recovery experienced by the circuit prior to the V DD switching and (2) the frequency sensitivity to device aging after the VDD switching.

Original languageEnglish (US)
Title of host publication2014 IEEE International Reliability Physics Symposium, IRPS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2D.2.1-2D.2.6
ISBN (Print)9781479933167
DOIs
StatePublished - Jan 1 2014
Event52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States
Duration: Jun 1 2014Jun 5 2014

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other52nd IEEE International Reliability Physics Symposium, IRPS 2014
CountryUnited States
CityWaikoloa, HI
Period6/1/146/5/14

Keywords

  • bias temperature instability
  • dynamic voltage and frequency scaling
  • frequency degradation
  • superposition property

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    Zhou, C., Wang, X., Xu, W., Zhu, Y., Reddi, V. J., & Kim, C. H. (2014). Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014 (pp. 2D.2.1-2D.2.6). [6860593] (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6860593